Thin films of tin oxide were deposited by electron beam evaporation. The effects of the sensor biasing voltage and film thickness on the CO-sensing of tin oxide thin films were investigated. The films were characterized using X-ray diffraction and X-ray photoelectron spectroscopy All the films were found to be amorphous. The current-voltage characteristic of the sensor in air has shown that sem...

We present a new method to measure the triplet exciton diffusion length in organic semiconductors. N,N'-di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl)-4,4'-diamine (NPD) has been used as a model system. Triplet excitons are injected into a thin film of NPD by a phosphorescent thin film, which is optically excited and forms a sharp interface with the NPD layer. The penetration profile of the tri...

A low temperature solution-processed thin-film transistor (TFT) using zinc oxide (ZnO) film as an exposed sensing semiconductor channel was fabricated to detect and identify various solution solvents. The TFT devices would offer applications for low-cost, rapid and highly compatible water-soluble detection and could replace conventional silicon field effect transistors (FETs) as bio-sensors. In...

Ternary semiconductor CdZnS films were prepared by chemical bath deposition (CBD). Effect of Zn concentration and deposition time on the forming chaarcterization of CdZnS films are investigated by the optical transmission spectra. The competition mechanism of Zn and Cd with the complexing agent NH3 to forming the complex play a critical role in the forming of Cd1-xZnxS thin film when Zn concent...

Organic-inorganic hybrid halide perovskites are proven to be a promising semiconductor material as the absorber layer of solar cells. However, the perovskite films always suffer from nonuniform coverage or high trap state density due to the polycrystalline characteristics, which degrade the photoelectric properties of thin films. Herein, the alkali metal ions which are stable against oxidation ...

n-BiVO4 is a promising semiconductor material for photoelectrochemical water oxidation. Although most thin-film syntheses yield discontinuous BiVO4 layers, back reduction of photo-oxidized products on the conductive substrate has never been considered as a possible energy loss mechanism in the material. We report that a 15 s electrodeposition of amorphous TiO2 (a-TiO2) on W:BiVO4/F:SnO2 blocks ...

Colloidal semiconductor nanocrystals have attracted attention for cost-effective, solution-based deposition of quantum-confined thin films for optoelectronics. However, two significant challenges must be addressed before practical nanocrystal-based devices can be realized. The first is coping with the ligands that terminate the nanocrystal surfaces. Though ligands provide the colloidal stabilit...

Based on an expanded distorted-wave approximation, analytical intensity expressions are derived for phasesensitive reference-beam x-ray diffraction in both the transmission and the reflection cases. Results from this approach are compared with the rigorous n-beam dynamical theory calculations and are shown to be very accurate if the crystal is in the thin kinematic limit. The method represents ...

In this work, the Al-rich AIN thin film is deposited on Si substrate by radio frequency (RF) sputtering to form a metal-insulator-semiconductor (MIS) structure. Al nanocrystals (nc-Al) are formed and embedded in the AIN thin film. Charge trapping/detrapping in the nc-Al leads to a shift in the flat-band voltage (VFB) of the MIS structure. The charge storage ability of the AIN thin films contain...

We have investigated the microwave-detected photoconductivity responses from the amorphous In–Ga–Zn–O (a-IGZO) thin films. The time constant extracted by the slope of the slow part of the reflectivity signals are correlated with TFT performances. We have evaluated the influences of the sputtering conditions on the quality of a-IGZO thin film, as well as the influences of gate insulation films a...