An effective compliant substrate for Si1−xGex growth is presented. A silicon-on-insulator substrate was implanted with B and O forming 20 wt % borosilicate glass within the SiO2. The addition of the borosilicate glass to the buried oxide acted to reduce the viscosity at the growth temperature of Si1−xGex , promoting the in situ elastic deformation of the thin Si (∼ 20 nm) layer on the insulator...

In this paper we consider Deligne-Lusztig varieties. We explicitly describe the canonical bundles of their smooth compactifications in terms of homogeneous line bundles pulled back from G=B. Using this description we show that the members (one member in each dimension) of a special family of DeligneLusztig varieties have ample canonical bundles. A consequence is that, unlike the closely related...

Si/Si1-xGex Heterostructured nanowires are grown by Reduced Pressure-Chemical Vapor Deposition (RP-CVD) using catalyst assisted Vapor Liquid Solid (VLS) and Vapor Solid Solid (VSS) method. We aim to obtain compositional (Si/Si1xGex) and/or doped (p-i-n) heterostructures with abrupt interfaces. The resulting NW heterostructures are structurally characterized using e.g. transmission electron micr...

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