This chapter looks at the role of silicon carbide (SiC) in microsystem technology. It starts with an introduction into the wide bandgap (WBG) materials and the properties that make them potential candidates to enable the development of harsh environment microsystems. The future commercial success of WBG microsystems depends mainly on the availability of high-quality materials, well-established ...

The optimum length of a monolith tube is one for which near-hundred percent conversion is attained, and at the same time, the catalyst over the ntire length of the tube is utilized. In practice, the length is adjusted by stacking monolith plugs end-to-end. In this study, the repercussions of uch a practice are investigated numerically with the goal to determine if a tube of length 2L demonstrat...

A new material, Fe203 supported on high specific surface area Sic, is very efficient for the H2S removal from hot exhaust gas. The specific properties of the silicon carbide allows a very large number of sulfidationJregeneration cycles.

Silicon Carbide is a wide bandgap semiconductor (3 eV for 6H-SiC at 300 K) suitable for high voltage, high temperature, high frequency and power devices. Its drift velocity

In this paper, the electric-discharge machining (EDM) of non-contact seal grooves was studied. Two types of material, namely: tungsten carbide and silicon carbide were tested by EDM due to their hard machining behaviors. The geometry of seal grooves is another reason why grinding or other precision machining processes cannot be applied. Four parameters of EDM processes were studied, namely: ele...

SiC is an extremely promising material for nanoelectromechanical systems given its large Young’s modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective...

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed by immersing the Pt coated samples into an etching solution containing sodium persulphate and hy...

Combustion synthesis (CS) is an effective technique to produce a wide variety of advanced materials that include powders and net shape products of ceramics, intermetallics, composites and functionally graded materials. This method was discovered in the beginning of 1970's in the former Soviet Union (Merzhanov & Borovinskaya, 1972), and the development of this technique has led to the appearance...

Dye-sensitized solar cells (DSSCs) are fabricated using a novel 3C-SiC/TiO(2) nanocomposite as a photoelectrode to enhance the power conversion efficiency. Compared with a pristine nanocrystalline TiO(2) cell, a DSSC based on a 3C-SiC (0.04 wt%)/TiO(2) nanocomposite photoelectrode shows ~115% increase in power conversion efficiency.