We present a micromachined cantilever with an integrated high-bandwidth resonator for direct measurement of tip-sample interaction forces in tapping-mode atomic force microscopy. Force measurements are achieved by a diffraction grating that serves as a differential displacement sensor for the tip motion relative to the cantilever body. Time-resolved tip-sample interaction force measurement is d...

A double-layer silicon detector consisting of two 500μm-thick silicon PIN photodiodes with independent readouts was mounted in a vacuum chamber and tested with X-ray sources. The detector is sensitive from 1–30 keV with an effective area of 6 mm. The detector performs best at −35 ◦C with an energy resolution of 220 eV (FWHM, full width at half maximum) at 5.9 keV, and is able to operate at room...

The Silicon Tracking System of the CBM Experiment consists of eight tracking layers of silicon detectors. Each layer is an array of vertical modules containing 300 μm thick double-sided silicon strip sensors. The strip pitch is 60 μm on both sides. The sensors are segmented into 1024 strips per side. On either side the strips are tilted by +7.5◦ or -7.5◦ with respect to the vertical edge, creat...

International Large Detector (ILD) adopts Particle Flow Algorithm (PFA) for precise measurement of multiple jets. The electromagnetic calorimeter (ECAL) of ILD has two candidates sensor technologies for PFA, which are pixelized silicon sensors and scintillator-strips with silicon photomultipliers. Pixelized silicon sensors have higher granularity for PFA, however they have an issue of cost redu...

Crystalline semiconductors are very well known, including silicon (the basis of the integrated circuits used in modern electronics), Ge (the material of the first transistor), GaAs and the other III-V compounds (the basis for many light emitters), and CdS (often used as a light sensor). In crystals, the atoms are arranged in near-perfect, regular arrays or lattices. Of course, the lattice must ...

We present the design and fabrication of 2 μm wavelength range type-II InP-based lasers and photodetectors integrated on a silicon photonic circuit. “W”-shaped type-II InGaAs/GaAsSb quantum wells are used as active region in the laser and photodetector structures. In order to achieve high efficient mode coupling, a taper structure in both the III-V waveguide and silicon waveguide is used. An an...

We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Sinw-ChemFET). Innovations concern the use of networks of suspended silicon N+/P/N+ nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-base...

This paper describes the development of a microinstrumentation system in silicon containing all the components of the data acquisition system, such as sensors, signal-conditioning circuits, analog-digital converter, interface circuits, sensor bus interface, and an embedded microcontroller (MCU). The microinstrumentation system is to be fabricated using the Multi-Chip-Module (MCM) technology bas...

This paper presents the design of a ring-shaped tri-axial fore sensor that can be incorporated into the tip of a guidewire for use in minimally invasive surgery (MIS). The designed sensor comprises a ring-shaped structure located at the center of four cantilever beams. The ringdesign allows surgical tools to be easily passed through which largely simplified the integration process. Silicon nano...

The CDF silicon detector is one of the largest silicon detectors in operation. It has a total of 722,432 electronic channels, and it covers a sensor surface area of 6m. The detector has been operating reliably for five years, and it has recorded 1:5 fb 1 of data. This article discusses experiences of operating such a large, complex system as well as the longevity of the detector. r 2007 Elsevie...