Bi 4 Ge 3 O 12 (bismuth germanate – BGO) single crystals were produced by the Czochralski technique and their electrical and dielectric properties were investigated by impedance spectroscopy. The isothermal ac measurements were performed for temperatures from room temperature up to 750 °C, but only the data taken above 500 °C presented a complete semicircle in the complex impedance diagrams. Ex...

Thanks to its extreme optical and electronic properties, diamond appears to be a promising semiconducting material for photon detection. Its wide band-gap, 5.5 eV, results in a very low leakage current and its electronic properties as high carrier mobility allow fast time response (J. E. Field, 1979). Besides, it has a large breakdown electric field (∼10 V/┤m), a low dielectric constant (i.e. l...