This paper shows that the Surrounding Gate Transistor (SGT) can be scaled down to decananometer gate lengths by using an intrinsically-doped body and gate work function engineering. Strong gate controllability is an essential characteristics of the SGT. However, by using an intrinsically-doped body, the SGT can realize a higher carrier mobility and stronger gate controllability of the silicon b...

In this study, HfxAlyOz nanolaminate, single-layer Al2O3, and HfO2 gate insulators were fabricated by atomic layer deposition (ALD) to successfully integrate the InGaZnO (IGZO) thin-film transistors (TFTs). Compared with HfO2-based TFTs, HfxAlyOz-based IGZO TFTs showed a larger field-effect mobility of 10.31 cm2/Vs smaller subthreshold swing 0.12 V/decade. Moreover, it threshold voltage shift 0...

In this study, the effect of dual gating on electrical characteristics amorphous indium-tin-gallium-zinc-oxide (a-ITGZO) thin-film transistors (TFTs) is investigated. The composition (In:Sn:Ga:Zn = 1.4:0.2:2.0:1.0 at.) a-ITGZO channel layer sputtered at 20°C close to that 1.6:0.2:2.0:1.0 ceramic target. a dual-gated TFT are superior those top- and bottom-gated TFTs. This dual-gating analyzed wi...

In this work, Y2O3–Al2O3 dielectrics were prepared and used in ZnO thin film transistor as gate insulators. The Y2O3 by the sol–gel method has many surface defects, resulting a high density of interface states with active layer TFT, which then leads to poor stability devices. We modified it atomic deposition (ALD) technology that deposited Al2O3 on dielectric layer, finally fabricated TFT devic...

Abstract Two-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, need integrated high-quality dielectrics—which are challenging deposit. Here we show that single-crystal strontium titanate—a high- κ perovskite oxide—can two-dimensional using van der Waals forces. Strontium titanate thin films grown on a sacrificial layer,...

In this paper, we present a double gate JL-TFET based biosensor by varying the dielectric constant to detect various biomolecules through label-free detection technique. An investigation regarding properties and behavior device has been investigated with help of Silvaco TCAD. It is observed that Junction less TFET advantageous over JLFET TFETdue absence junctions. The proposed shows reduced sho...

This paper analyses the electrical characteristics of 10 nm tri-gate (TG) N- and P-channel silicon-on-insulator (SOI) FinFETs with hafnium oxide gate dielectric. The analysis has been performed through simulations by using Silvaco ATLAS TCAD Bohm quantum potential (BQP) algorithm. influence geometrical parameters on threshold voltage VTH, subthreshold swing (SS), transconductance on/off current...

In this paper, low threshold voltage (Vt) “natural” transistors, available in some n+/p+ dual poly gate CMOS/ BiCMOS processes [1], are proposed for low voltage switched capacitor circuit design. The impact of the subthreshold off-current of these low devices on the performance of analog switched-capacitor (SC) circuits is analyzed. Methods for reducing the subthreshold offcurrent in analog swi...