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The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO2/interfacial layer was found to be 3.40 eV; owi...

The dramatically dropped permeability of magnetic materials at gigahertz frequencies, known as the Snoek's limit, has severely constrained microwave absorbing performance materials. To break limit high a plate-like heterostructure composed Ni-Fe ferrite, nitride, and Permalloy is fabricated through nitridation layered double hydroxide. It been found that single-phase flakes or multi-phase with ...

GaN growth on nitridated sapphire (0001) by rf plasma-assisted metal-organic molecular-beam epitaxy is shown to exhibit a highly superlinear growth rate and a transition from strained, smooth growth to relaxed cluster growth during the first layer. A coupled rate-equation model suggests that the growth rate arises from both the site-dependent reactivity of precursor molecules and a layer-depend...

An overview of evolution of transistor parameters under negative bias temperature instability stress conditions commonly observed in p-MOSFETs in recent technologies is presented. The physical mechanisms of the degradation as well as the different defects involved have been discussed according to a systematic set of experiments with different stress conditions. According to our findings, a phys...

We report single-crystalline mesoporous molybdenum nitride nanowires (meso-Mo3N2-NWs) prepared by topotactic reaction using single-crystalline molybdenum oxide nanowires. The single-crystalline nature of meso-Mo3N2-NWs was clearly observed by field-emission transmission electron microscopy. The meso-Mo3N2-NWs exhibited mesoporous structure with 45 m/g in specific surface area and 4.6 nm in aver...