Chemical reactivity and stability of highly epitaxial mixed-conductive LaBaCo2O5.5+δ (LBCO) thin films on (001) LaAlO3 (LAO) single-crystalline substrates, fabricated by using pulsed laser deposition system, were systematically investigated. Microstructure studies from x-ray diffraction indicate that the films are c-axis oriented with the interface relationship of [100]LBCO//[100]LAO and (001)L...

Thin films of CuSbS2, a potential candidate for absorber layer in thin film solar cells, were successfully deposited on soda lime glass substrates by using spray pyrolysis and the effect of variation of antimony concentration on the structural, morphological and optical properties were investigated. An aqueous solution of precursor containing cupric chloride, antimony acetate and thiourea was u...

The molecular dynamic technique was used to simulate the nano-indentation test on the thin films of silver, titanium, aluminum and copper which were coated on the silicone substrate. The mechanical properties of the selected thin films were studied in terms of the temperature. The temperature was changed from 193 K to 793 K with an increment of 100 K. To investigate the effect of temperature on...

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures" (1998). Faculty Publications from the Department of Electrical and Computer Engineering. 14. In situ infrared ͑IR͒ spectroscopy and visible-light ͑VIS͒ spectroscopic ell...

Uniform thin films of a metal-organic framework, which is constructed from free-base porphyrin linkers and hexa-zirconium nodes (MOF-525), are solvothermally grown on conducting substrates. Subsequently, solvothermal post metalations are employed to prepare the Zn-MOF-525 and Co-MOF-525 thin films. All the thin films are electroactive in aqueous media.

A low level tin doped indium oxide, ITO, (ca. 10 w % SnO2) thin films were prepared on glass substrate by electron beam technique. Deposited films with deposition rate of 0.1–0.25 nm s were annealed at different temperatures from 250 to 550 °C in air. The thin films were characterized using low and high angle X-ray diffraction and UV-visible spectroscopy. The lattice constant and the grain size...

Well-crystallized Sn2S3 semiconductor thin films with a highly (111)-crystallographic orientation were grown using RF sputtering. The surface morphology of the Sn2S3 thin films exhibited a sheet-like feature. The Sn2S3 crystallites with a sheet-like surface had a sharp periphery with a thickness in a nanoscale size, and the crystallite size ranged from approximately 150 to 300 nm. Postannealing...

Articles you may be interested in Temperature-dependent dielectric nonlinearity of relaxor ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 thin films Appl. Temperature dependent polarization switching properties of ferroelectric Pb0.92La0.08Zr0.52Ti0.48Oδ films grown on nickel foils Appl. Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low freque...

This chapter describes the method of manufacturing microfluidic microchannels formed by delaminated buckled thin films. Thin films under compression tend to delaminate and buckle. Microchannel geometry can be controlled by tailoring film residual stress and placing patterned adhesion-weakening layers utilizing photolithographic techniques. Results based on the photoresist as the adhesion weaken...

Sr(Ti1-xFex)O3-δ (0 ≤ x ≤ 0.2) thin films were grown on Si(100) substrates with LaNiO₃ buffer-layer by a sol-gel process. Influence of Fe substitution concentration on the structural, ferroelectric, and magnetic properties, as well as the leakage current behaviors of the Sr(Ti1-xFex)O3-δ thin films, were investigated by using the X-ray diffractometer (XRD), atomic force microscopy (AFM), the fe...