نتایج جستجو برای: through risk breakdown structure

تعداد نتایج: 3549474  

This study explains the breakdown mechanism in different triggered spark gap switches. Two different trigger electrode configurations are tested for the switch predischarge operation in a nitrogen laser circuit. The behavior of the breakdown voltage, when a trigger pulse is applied to the trigger electrode, is investigated, and the results are reported. Based on the experimental measurements ne...

2003
Valery A. Dolgashev Sami G. Tantawi

RF breakdown is one of the major factors determining performance of high power rf components and rf sources. RF breakdown limits working power and produces irreversible surface damage. The breakdown limit depends on the rf circuit, structure geometry, and rf frequency. It is also a function of the input power, pulse width, and surface electric and magnetic fields. In this paper we discuss multi...

Journal: :Korean Journal of Construction Engineering and Management 2013

Journal: :Humanities & social sciences communications 2023

Abstract Losses and damages that any company or organization experience is usually caused by some unidentified risks hit them unprepared. Some companies even must close their business discontinue operation due to the huge negative impact of risk them. Knowing an face important. Risk needs be identified properly. Though there had been approaches a person can use in identifying risk, most those a...

Journal: :IEEJ Transactions on Fundamentals and Materials 1994

Journal: :Civil and environmental science journal 2022

To achieve the level of infrastructure performance as a middle-income country by 2025, well to catch up with backwardness infrastructure, specifically for toll road projects, government targets that 2021 Indonesia will have 5200 km roads. Hence, there is significant increase 3000 km. The government, especially in development gives more portion purely private sector, BUMN, and Public Private Par...

2009
In-Shik Han Won-Ho Choi Hyuk-Min Kwon Min-Ki Na Ying-Ying Zhang Yong-Goo Kim Jin-Suk Wang Chang Yong Kang Gennadi Bersuker Byoung Hun Lee Yoon Ha Jeong

Time-dependent dielectric breakdown (TDDB) characteristics of La2O3-doped high-k dielectric in Hf-based high-k/TaN metal gate stack were studied. Unlike the abrupt breakdown in the conventional SiO2, dielectric breakdown behaviors of La-incorporated HfON and HfSiON dielectrics show progressive breakdown characteristics. Moreover, the extracted Weibull slope β of breakdown distribution is in the...

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