Graphene films were produced by chemical vapor deposition (CVD) of pyridine on copper substrates. Pyridine-CVD is expected to lead to doped graphene by the insertion of nitrogen atoms in the growing sp(2) carbon lattice, possibly improving the properties of graphene as a transparent conductive film. We here report on the influence that the CVD parameters (i.e., temperature and gas flow) have on...

In this work, we produced large-area graphene oxide (GO) sheets with fewer defects on the basal plane by application of shear stress in solution to obtain high-quality reduced graphene oxide (RGO) sheets without the need for post-annealing processes. This is described as rheologically derived RGO. The large-area GO sheets were generated using a homogenizer in aqueous solution, which induced sli...

Graphene nanofilms were deposited by the spray coating method at different concentrations (0.05, 0.1, 0.2, 0.3, 0.4, and 0.5 g) prepared 120°C. The characterized in terms of their structural, morphological, optical, electrical properties. results confirm formation high-purity high-crystallinity graphene with a layered nanosheet morphology. X-ray diffraction pattern shows presence pure (002) cry...

With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive review of the state-of-the-art research activities that focus on transparent metal oxide nanowire transisto...

Tin-doped indium oxide (ITO) films with Sn/In atomic ratios in the range 0-0.1 were synthesized by electrochemically assisted deposition (EAD). The process involves a fast one-step cathodic deposition of a highly crystalline In-Sn hydroxide (InSnOH) film followed by thermal conversion into ITO at 300 C. The cathodic precipitation of InSnOH is preceded by formation of an In-Sn complex in solutio...

Efficient visible light-induced photoelectrochemical oxidation of water was achieved using a tungsten(iv) oxide (WO(3)) film composed of perpendicularly oriented plate-like crystallites, a flake-wall film, prepared on a transparent conductive substrate by controlling anisotropic crystal growth of tungsten oxide hydrate (WO(3).H(2)O) followed by calcination.

Transparent Conductive Oxide (TCO) films are widely used in optoelectronic devices, such as solar cells, LEDs, and Lasers. Utilization of these contacts directly affects the device efficiencies. Purpose this study is to produce optimize properties Aluminum doped Zinc (AZO) using a vapor phase technique, Atomic Layer Deposition (ALD) for (n+) a-Si:H surface silicon Heterojunction Solar Cells (HJ...

In this study, indium–tin oxide (ITO)/Nb-doping TiO2 (TNO) double-layer transparent conductive (TCO) films deposited using DC magnetron sputtering were used as a surface anti-reflection layer with an overall thickness of 100 nm for films. The simulated results showed that ITO and TNO combinations 90 nm/10 nm, 80 nm/20 70 nm/30 had higher transmittance lower reflectance than others in the visibl...

Closed field” magnetron (CFM) sputtering offers a flexible and high throughput deposition process for optical coatings and thin films required in display technologies. CFM sputtering uses two or more different metal targets to deposit multilayers comprising a wide range of dielectrics, metals and conductive oxides. Moreover, CFM provides a room temperature deposition process with high ion curre...