نتایج جستجو برای: tunnel fet tfet
تعداد نتایج: 38497 فیلتر نتایج به سال:
As transistor dimensions are scaled down in accordance with Moore's Law to provide for improved performance and cost per function, variability in transistor performance grows in significance and can present a major challenge for achieving high yield in the manufacture of integrated circuits utilizing transistors with sub-30 nm gate lengths. Increased variability in the threshold voltage (V T) o...
In this paper, it is designed and analyzed the n type tunneling Field Effect Transistor (TFET) to obtain sub-threshold swing parameter (SS) below 60 mV/dec, it is better than the limit of conventional MOSFET. SILVACO TCAD is used for rigorous study of p-i-n structure based on Silicon. It is minimised the short channel effect of SiO2 material. It is obtained that TFET has good ability to produce...
In order to implement complementary logic function with L-shaped tunneling field-effect transistors (TFETs), current drivability and subthreshold swing (SS) need to be improved more. For this purpose, highk material such as hafnium dioxide (HfO2) has been used as gate dielectric rather than silicon dioxide (SiO2). The effects of device parameters on performance have been investigated and the de...
Background & aim: In addition to the benefits of frozen embryo transfer (FET), the key question is whether freezing or melting embryos can cause fetal harm and prenatal complications. This study aimed to assess pregnancy and neonatal outcomes after FET and fresh embryo transfer (ET). Methods: This retrospective ...
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