A configuration of misfit dislocation dipoles is observed in a Ga0.5In0.5P heterostructure grown by solid-source molecular-beam epitaxy on GaAs. The dipole dislocations are mostly of 60° type, separated by ;3.5 nm. The dislocations are not produced by conventional lattice mismatch, rather, they could be the result of lateral compositional modulation in the Ga0.5In0.5P epilayer. © 2000 American ...

PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enh...

We report synthesis of a novel metal-semiconductor heterostructure, in which AuAg alloy nanoparticles locate at Ag2S quantum tube tips. Ag2S quantum tubes have ultrathin walls below 1 nm thickness. The formation mechanism, UV-vis, luminescence and photoelectrochemical activity of the prepared heterostructure were further studied.

Aligned CuO nanowires (NWs) were synthesized by a simple cost-effective oxidation method. They act as cores; high density CuO/ZnO core/shell heterostructure NWs were fabricated by thermal decomposition. Using the core/shell heterostructure NWs as a photoelectrode, a 0.71% photo-to-hydrogen conversion efficiency was obtained from photoelectrochemical water decomposition.

A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D /IG measurements.

A p-type heterojunction photoelectrode consisting of platinized CuBi2O4 layered on a CuO film was prepared. The CuO|CuBi2O4|Pt electrode photo-generates H2 in pH neutral aqueous solution during visible light irradiation and exhibits a substantially enhanced photocurrent compared to CuO|Pt and CuBi2O4|Pt electrodes. Reduced electron-hole recombination by the band offsets in the heterostructure i...

Correction for ‘First principles study of electronic properties and optoelectronic performance type-II SiS/BSe heterostructure’ by Shah Saleemullah Sabir et al. , New J. Chem. 2023, 47 4537–4542, https://doi.org/10.1039/D2NJ06198H.

The lasing characteristics of a photonic crystal membrane heterostructure cavity that utilises a kagome type lattice is demonstrated. A heterostucture cavity is formed by interfacing two photonic crystals such that the dispersion maximum of the inner lattice falls within the photonic bandgap of the surrounding lattice. Feedback to slow Bloch modes allows for localisation of band edge modes and ...

Recent discovery of a novel hexagonal phase GeSe (Gamma-GeSe) has triggered great interests in nanoelectronics applications owing to its electrical conductivity bulk even higher than graphite while monolayer is semiconductor. For potential applications, construction functional two-dimensional (2D) contacts indispensable. Herein, via first-principles calculations, we propose the design van der W...