We study the intravalley spin-orbit-mediated spin relaxation in monolayers of MoS2 within a two bands effective Hamiltonian. The intrinsic spin splitting of the valence band as well as a Rashba-like coupling due to the breaking of the out-of-plane inversion symmetry are considered. We show that, in the hole doped regime, the out-of-plane spin relaxation is not very efficient since the spin spli...

Tunneling spectroscopy has been used to detect the photoexcitation of charge carriers in the wide band-gap semiconductors, ZnO and cubic SiC. Because the process is energy sensitive, valence-toconduction hand or defect charge transfer transitions may be selectively excited and detected with the scanning tunneling microscope. Two types of transitions were detected which change the tunneling resp...

The k.p method and the effective mass theory are applied to compute valence-band electronic structure and optical properties of ZnO1-хSх ternary alloys under biaxial strain. A significant modification of the band structure with increasing sulfur content is revealed. Features of wavefunctions and matrix elements in the transverse electrical (TE) and transverse magnetic (TM) regimes for three val...

The spectra of spontaneous terahertz (THz) electroluminescence at the breakdown of shallow Ga acceptor in Ge were observed for the first time and investigated. We found and characterized the emission lines corresponding to the hole transitions between the excited states and the ground state of the impurity center as well as the transitions of the hot holes from the valence band to the impurity ...

The negative differential capacitance (NDC) effect is observed on a titanium-oxide-silicon structure, formed on n-type silicon with embedded germanium quantum dots (QDs). The Ge QDs were grown by an Sb-mediated technique. The NDC effect was observed for temperatures below 200 K. We found that approximately six to eight electrons can be trapped in the valence band states of Ge QDs. We explain th...

The spectral properties of LaVO(4), GdVO(4) and LuVO(4) crystals doped with Ce(3+), Pr(3+), Eu(3+) or Tb(3+) have been investigated in order to determine the position of the energy levels relative to the valence and conduction bands of the hosts along the trivalent and divalent lanthanide series. Pr(3+) and Tb(3+) ground state levels are positioned based on the electron transfer energy from tho...

Valence electron energy-loss (VEEL) spectroscopy was performed on six ceramic materials in a dedicated scanning transmission electron microscope (STEM). Quantitative analysis of these data is described yielding access to the complex optical properties and the electronic structure of the materials. Comparisons are made on the basis of the interband transition strength describing transitions betw...

An analysis of the P2S6 cluster electronic structure and its comparison with the crystal valence band in the paraelectric and ferroelectric phases has been done by first-principles calculations for Sn2P2S6 ferroelectrics. The origin of ferroelectricity has been outlined. It was established that the spontaneous polarization follows from the stereochemical activity of the electron lone pair of ti...

Tunneling spectroscopy has been used to detect the photoexcitation of charge carriers in the wide band-gap semiconductors, ZnO and cubic SiC. Because the process is energy sensitive, valence-toconduction hand or defect charge transfer transitions may be selectively excited and detected with the scanning tunneling microscope. Two types of transitions were detected which change the tunneling resp...

The valence band resonant photoemission spectra of a TiO2 sub-monolayer grown on an Al2O3 substrate have been measured throughout the Ti 3p absorption edge, i.e. at photon energies between 40 and 60 eV. The resonance process has been analysed in terms of constant initial state (CIS) curves, showing a peak at 49.5 eV photon energy, corresponding to a Fano-like resonant process. The Ti 3d contrib...