Formation and evolution of defect levels in the electronic structure silicon nitride with cubic spinel structure, γ-Si3N4, after irradiation He+ ions was investigated using spectroscopic techniques. Strong changes cathodoluminescence (CL), photoluminescence (PL), excitation (PLE) Raman spectra were detected. In particular, excitonic PL significantly inhibited a new near-IR band appeared gap hν≥...