نتایج جستجو برای: ترانزیستورهای ldmos
تعداد نتایج: 449 فیلتر نتایج به سال:
Failure analysis of power devices under avalanche breakdown condition during Unclamped Inductive Switching (UIS) stress is presented. This study provides a clear understanding of the dependency of various failure mechanisms on multi-cell or finger structures in n-type LDMOS power devices investigated by 2D and 3D technology-computer-aideddesign (TCAD) simulation. The maximum amount of UIS energ...
A single stage wideband amplifier based on an AlGaN/GaN HEMT power cell with a total gate-width of 16 mm matched to 50 Ohm has been successfully developed and characterized by use of a single-carrier W-CDMA signal. A very wide bandwidth of more than 1.7 GHz covering several mobile radio frequency bands within Land S-band with peak output power levels up to 44 dBm has been demonstrated with meet...
A physically-based approach suitable for TCAD analyses has been developed for the hot-carrier-stress (HCS) degradation prediction in lateral DMOS transistors with shallow trench isolation (STI). The measured linear draincurrent degradation (ID,lin) induced by HCS is nicely reproduced by TCAD results for different LDMOS devices at significant stress conditions on an extended range of stress tim...
In this paper, we report a combined experimental/simulation analysis of the degradation induced by hot carrier mechanisms, under ON-state stress, in silicon-based LDMOS transistors. In particular, the ON-resistance degradation in linear regime has been experimentally characterized by means of different stress conditions and temperatures. The hot-carrier stress regime has been fully reproduced i...
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