Recently proposed potential has been used to calculate the contribution of a point defect to the electrical resistivity of simple and non-simple metals including d and f-shell metals. The parameter of the potential has been determined using zero pressure condition while the exchange and correlation effect due to Taylor is incorporated. Our present findings for Al, Pb, Cu, Ag and Au are excellen...

There is growing interest in marine direct current (DC) resistivity methods for sub-seafloor exploration of a broad range of geophysical and geological targets. To address this, we have developed a new marine DC method with a vertical electrode configuration (VEC). Compared to conventional marine DC methods that use a horizontal electrode configuration, the shape and position of our VEC cable c...

A search for superconductivity has been carried out on the hexagonal polymorph of Laves-phase CaLi(2), a compound for which Feng, Ashcroft, and Hoffmann predict highly anomalous behavior under pressure. No superconductivity is observed above 1.10 K at ambient pressure. However, high-pressure ac susceptibility and electrical resistivity studies to 81 GPa reveal bulk superconductivity in CaLi(2) ...

A new method of forming low-resistance, ultra-shallow p+ junctions for improved PMOSFET short-channel performance is presented. Ultra-shallow Sio,8Geo,2/Si heterojunctions self-aligned to the gate electrode are formed by Ge ion implantation. Afterwards, sidewall spacers are formed and a deep B implant is performed to form the deep source/drain (S/D) contact regions. Upon post-implant annealing,...

30 Si(n,ƒÁ)31Si2.62h +31P+ƒÀ(1) Irradiated silicon crystals are heavily damaged and electrical resistivity changes drastically. The lattice damage can be removed by an appropriate annealing. The change in resistivity of the silicon crystals is quite complex. It depends on both impurity atoms contained originally in silicon and atoms produced by nuclear reactions. This note describes the determi...

We have implanted boron (B) ions (dosage: 5×1014 cm-2) into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resistivity of 7.37 mΩ cm has been obtained in our experiment, which suggests that the hydrogenation of B-doped diamond results in a low-resistivity p-type material. Interestingly, inverse annealing, in which...

We study the Coulomb drag between two single graphene sheets in intrinsic and extrinsic graphene systems with no interlayer tunneling. The general expression for the nonlinear susceptibility appropriate for single-layer graphene systems is derived using the diagrammatic perturbation theory, and the corresponding exact zerotemperature expression is obtained analytically. We find that, despite th...

This work presents a flexible thick-film Bismuth Tellurium/Antimony Tellurium (BiTe/SbTe) thermoelectric generator (TEG) with reduced material resistivity fabricated by screen printing technology. Cold isostatic pressing (CIP) was introduced to lower the resistivity of the printed thermoelectric materials. The Seebeck coefficient (α) and the resistivity (ρ) of printed materials were measured as...

We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, 0.16 x 10(10) to 7.5 x 10(10) cm(-2), are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an interme...

It is known that the three important parameters: resistivity, capillary pressure, and relative permeability, are all a function of fluid saturation in a porous medium. This implies that there may be a correlation among the three parameters. There have been many papers on the approach to inferring relative permeability from capillary pressure data. However the literature on the interrelationship...