Partially deuterated Ca3Al2(SiO4)3 x(OH)4x hydrates prepared by a reaction in the presence of D2O of synthetic tricalcium aluminate with different amounts of amorphous silica were characterized by Si and Al magic-angle spinning nuclear magnetic resonance (NMR) spectroscopy. The Si NMR spectroscopy was used for quantifying the non-reacted silica and the resulting hydrated products. The incorpora...

It is of great importance to clarify the atomic structure and strength of interfaces between metal and Si substrate in an electronic device. While interaction between atoms near the interface is complicated, ab initio molecular dynamics makes it possible to analyze such properties of interface. In this study, in order to evaluate structure and strength of Si/Al interface, evaporation process of...

In Wolf-Rayet and asymptotic giant branch (AGB) stars, the (26g)Al(p,γ)(27)Si reaction is expected to govern the destruction of the cosmic γ-ray emitting nucleus (26)Al. The rate of this reaction, however, is highly uncertain due to the unknown properties of key resonances in the temperature regime of hydrogen burning. We present a high-resolution inverse kinematic study of the (26g)Al(d,p)(27)...

The thermal behavior of a woolly erionite-K sample (Lander County, NV, USA), chemical formula (Ca2.03Na0.73K2.52Mg0.26)[Al8.22Si27.78O71.80]·35.94H2O, was investigated in the 303–1173 K thermal range by in situ X-ray powder diffraction. Present data suggest a general thermally-induced volume contraction whose magnitude increases as Si Si+Al ratio becomes smaller. An inverse correlation between ...

The oxidation of Nb-silicide-based alloys is improved with Al, Cr, Ge or Sn addition(s). Depending on addition(s) and its(their) concentration(s), alloyed C14-AB₂ Laves and A15-A₃X phases can be stable in the microstructures of the alloys. In both phases, A is the transition metal(s), and B and X respectively can be Cr, Al, Ge, Si or Sn, and Al, Ge, Si or Sn. The alloying, creep and hardness of...

We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 e) is intermediate between that of Al/AlO(x)/Al tunnel junctions (greater than 1 e) and Si SEDs defined with Si gates (0.01 e). This range of values suggests that defects in the AlO(x) are the main cause of the charge offset drift...