The study of biomolecular interactions at the single-molecule level holds great potential for both basic science and biotechnology applications. Single-molecule studies often rely on fluorescence-based reporting, with signal levels limited by photon emission from single optical reporters. The point-functionalized carbon nanotube transistor, known as the single-molecule field-effect transistor, ...

A single-walled carbon nanotube (SWCNT) in a field-effect transistor (FET) configuration provides an ideal electronic path for label-free detection of nucleic acid hybridization. The simultaneous influence of more than one response mechanism in hybridization detection causes a variation in electrical parameters such as conductance, transconductance, threshold voltage and hysteresis gap. The cha...

Carbon nanotube (CNT) ferroelectric field-effect transistors (FeFETs) with well-defined memory switch behaviors are promising for nonvolatile, nondestructive read-out (NDRO) memory operation and ultralow power consumption. Here, we report two-bit CNT-FeFET memories by assembling two top gates on individual nanotubes coated with ferroelectric thin films. Each bit of the nanotube transistor memor...

We demonstrate logic circuits with field-effect transistors based on single carbon nanotubes. Our device layout features local gates that provide excellent capacitive coupling between the gate and nanotube, enabling strong electrostatic doping of the nanotube from p-doping to n-doping and the study of the nonconventional long-range screening of charge along the one-dimensional nanotubes. The tr...

in this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (ldds-cntfet) with a negative differential resistance (ndr) characteristic, called negative differential resistance ldds-cntfet (ndr-ldds-cntfet). the device was simulated by using a non equilibrium green’s function method. to achieve this phenomenon, we have created...

Submitted for the MAR05 Meeting of The American Physical Society Diameter dependence of carbon nanotube transistor performance ZHIHONG CHEN, JOERG APPENZELLER, JOACHIM KNOCH, Institution fuer Schichten und Grenzflaechen, YU-MING LIN, PHAEDON AVOURIS, IBM T. J. Watson Research Center — As has been shown before, single wall carbon nanotube field-effect transistors (CNFETs) behave as Schottky barr...

Carbon nanotube field-effect transistors (CNFETs) are a promising candidate to replace conventional metal oxide field-effect transistors (MOSFETs) in the time to come. They have considerable characteristics such as low power consumption and high switching speed. Full adder cell is the main part of the most digital systems as it is building block of subtracter, multiplier, compressor, and other ...

The novel thermal conductance mechanism, theoretically predicted and experimentally measured in nanotube field-effect transistors (FET), is discussed with respect to the power dissipation problem of modern carbon-based electronics. Such an effect is due to the near-field coupling of the charge carriers in the transistor channel with the local electric field of the surface electromagnetic modes....

The low-frequency electronic noise properties of individual single-wall metallic carbon nanotubes are investigated. The noise exhibits a 1/f frequency dependence and a V 2 voltage dependence. The noise power at 8 K appears to be three orders of magnitude smaller than at 300 K. As a demonstration of how these noise properties affect nanotube devices, a preliminary investigation of the noise char...