Short-Cannel MoS2 Transistors Yi Yang, He Tian, Xing Wu, Tian-Ling Ren, and colleagues demonstrate a photolithography resolution-independent method to realize 10 nm short-channel transistors in article 2100543. By depositing the noble electrode partially on self-oxidized aluminum electrode, channel length is directly defined by ≈10 thickness of oxidization layer, which can provide new opportuni...

The measurement of dose distributions in clinical brachytherapy, for the purpose of quality control, commissioning or dosimetric audit, is challenging and requires development. Radiochromic film dosimetry with a commercial flatbed scanner may be suitable, but careful methodologies are required to control various sources of uncertainty. Triple-channel dosimetry has recently been utilized in exte...

Compressively strained InSb structures aimed for p-channel heterostructure field effect transistors (HFETs) are analysed in order to maximise their hole mobility. We optimise the heterostructure by the change of the material composition, thickness of the layers and position of δ-doping. The splitting of light and heavy hole bands in compressively strained channels are calculated by nextnano sof...

As high-permittivity dielectrics approach use in metal-oxide-semiconductor field-effect transistor production, an atomic level understanding of their dielectric properties and the capacitance of structures made from them is being rigorously pursued. We and others have shown that crystal structure of ZrO2 films have considerable effects on permittivity as well as band gap. The as-deposited films...

High leakage current in deep sub-micron regimes is becoming a significant contributor to power dissipation of CMOS circuits as threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, leakage control and reduction are very important, especially for low power applications. The reduction in leakage current has to be achieved using both process and circuit level techn...