— Various model parameter calculation equations of RF CMOS inductors are compared. The calculation equations are using as variables either Y, Z-parameters or S-parameters. Results are based on on-wafer RF S-parameter measurements of a 3.75 turn spiral inductor fabricated in AMIS 0.7 μm CMOS DM1P n-well technology. Results obtained with calculation equations for a differentially driven inductor ...

banana samples were purchased from a local market in sabzevar located at northeast of iran. then samples stored at refrigerator between 5–10oc during experiments, for prevention of chilling injury, 36 samples at three replications were prepared so as bananas were peeled and sliced with a sharp knife at three thicknesses (3, 5 and 10 mm) and then treated by three pretreatment methods (t1: chemic...

the influence of vam fungi and bacterial biofertilizer (bbf) with 50% reduction in the recommended dose of (n and p) chemical fertilizers on leaf quality traits of mulberry variety (s-13) and its impact on silkworm (pm ? nb4d2) growth and cocoon characters were studied under semi-arid conditions. four different treatments were imposed i.e., t1: control (only 100% npk); t2: vam (50% cut in p); t...

We develop a covariance-matrix-based uncertainty analysis for vector-network-analyzer scattering-parameter measurements. The covariance matrix captures all of the measurement uncertainties and statistical correlations between them. This allows the uncertainties of vector-network-analyzer scattering-parameter measurements to be propagated into the uncertainties of other quantities derived from s...

An efficient measurement methodology is proposed to construct the scattering parameters of a multi-port device using a four-port vector network analyzer (VNA) without the external un-terminated ports. By using the four-port VNA, the reflected waves from the un-terminated ports could be minimized. The proposed method significantly enhances the accuracy of the S-parameters with less number of mea...