The study develops an integrated humidity microsensor fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated humidity sensor consists of a humidity sensor and a ring oscillator circuit on-a-chip. The humidity sensor is composed of a sensitive film and branch interdigitated electrodes. The sensitive film is zinc oxide prepared by sol-gel me...

Cognitive radio and/or SDR (Software Defined Radio) inherently requires multi-band and multi standard wireless circuit. The circuit is implemented based on Si CMOS technology. In this article, the recent progress of Si RF CMOS is described and the reconfigurable RF CMOS circuit which was proposed by the authors is introduced. At the present and in the future, several kind of Si CMOS technology ...

In this paper, a low voltage CMOS current controlled floating resistor which is convenient for integrated circuit implementation is designed by using differential pair. The proposed resistor has a simple circuit structure and low power dissipation. This circuit is required ±0.75 V as a power supply. The basic advantages of this circuit are wide tuning range of the resistance value, satisfied fr...

In CMOS chips, the wider layout rules were traditionally applied to overcome latch-up issues. However, chip area with was often enlarged, and in turn cost also increased. To effectively improve immunity without enlarging area, circuit methods therefore invented. An overview on methodology used prevent issues integrated circuits (ICs) is presented this article. The solutions, including reducing ...

In this paper, supply, process & temperature compensated, low voltage current reference for CMOS integrated circuits is presented. To minimize production cost, it uses no BJTs, external components or trimming procedures. This circuit is designed in Intel-22nm process and evaluated by computer simulations. The circuit behaviour is supported by theoretical expressions and is in agreement with sim...

This paper introduces a CMOS-microfluidics integration scheme for electrochemical microsystems. A CMOS chip was embedded into a micro-machined silicon carrier. By leveling the CMOS chip and carrier surface to within 100 nm, an expanded obstacle-free surface suitable for photolithography was achieved. Thin film metal planar interconnects were microfabricated to bridge CMOS pads to the perimeter ...

We have designed, fabricated, and tested a series of compact CMOS integrated circuits that realize the winner-take-all function. These analog, continuous-time circuits use only O(n) of interconnect to perform this function. We have also modified the winner-take-all circuit, realizing a circuit that computes local nonlinear inhibition. Two general types of inhibition mediate activity in neural s...