The authors report a new, important phenomenon: photo-assisted etching of p-type Si in chlorinecontaining plasmas. This mechanism was discovered in mostly Ar plasmas with a few percent added Cl2, but was found to be even more important in pure Cl2 plasmas. Nearly monoenergetic ion energy distributions (IEDs) were obtained by applying a synchronous dc bias on a “boundary electrode” during the af...

Dielectric layers are often employed as etch masks for mesa and trench structures during vertical-cavity surface-emitting laser VCSEL fabrication. The removal of these mask layers by reactive ion etching results in unavoidable exposure of the top laser facet to sputtering. This sputtering is experimentally shown to impact the device performance. After a thickness of less than a quarter waveleng...

INTRODUCTION Systems that bond composite material to enamel are constantly modernized (application is simplified and the number of system components is reduced). The latest products are one-coat systems combining etchant, primer, and bond. Use of such systems is easier for the dentist and adds to patient's comfort. The aim of this work was to evaluate microscopically the composite material--bon...

OBJECTIVES The purpose of this in vitro study was to evaluate the microleakage and penetration of fissure sealant in permanent molar teeth with fluorosis after pretreatment of the occlusal surface. MATERIALS AND METHODS A total of 120 third molars with mild dental fluorosis were randomly divided into 6 groups (n = 20). The tooth surfaces were sealed with an unfilled resin fissure sealant (FS)...

OBJECTIVES The aim of this study was to evaluate the (1) bond strength of a etch-and-rinse and self-etching adhesive systems to cavosurface enamel, (2) influence of the previous acid etching with phosphoric acid 35% to the self-etching adhesive application on bond strength values, and (3) analysis of the cavosurface enamel morphology submitted to different types of conditioning, with the use of...

in this paper, we have studied the electrical properties of the randomly distributed metallic (co and fe) nano/ micro wires on silicon substrate. deposition was carried out potentiostatically into the pores of the track-etch polycarbonate membrane spin coated onto the si substrate. spin coated films were irradiated with 150mev ni (+11) ions at a fluence of 8e7 ions/cm2, followed by uv irradiati...

Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...

Damage free etching is required for the gate etching process in GaAs IC fabrication. While inductively coupled plasma (ICP) is thought to be the low damage etching technique, the degradation of DC characteristics was observed in our GaAs MESFETs. Threshold voltage shifts and Schottky barrier height is decreased. It was confirmed that the control of the antenna power (i.e. applied power to the u...

A tuning element has been constructed using micro-opto-electro-mechanical systems (MOEMS) technology for Littman configuration external cavity tunable lasers. The device is fabricated by deep reactive ion etching of bonded silicon-on-insulator, using a single layer of patterning to integrate a fixed grating and a mirror that is rotated about a virtual pivot by an electrostatic comb drive. The m...

Recently, self-etching adhesive system has been introduced to simplify the clinical bonding procedures. It is less acidic compared to the phosphoric acid, thus there is doubt whether this system has enough bond strength to enamel. The purpose of this study was to investigate the influence of additional etching on the adhesion of resin composite to enamel. Ninety extracted bovine permanent anter...