In this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and ...

We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10-4. The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes ...

PbTe mesa diodes were fabricated from a series of p−n junctions grown on BaF2 substrates. For this series, the hole concentration was kept constant at 1017 cm−3 and the electron concentration varied between 1017 and 1019 cm−3. Capacitance versus voltage analysis revealed that for n > 1018 cm−3, a one-sided abrupt junction is formed. The direct and reverse branches of the current versus voltage ...

Pt/ZnO nanorod (NR) and Pt/modified ZnO NR Schottky barrier ultraviolet (UV) photodetectors (PDs) were prepared with different seed layers and metal oxide modifying layer materials. In this paper, we discussed the effect of metal oxide modifying layer on the performance of UV PDs pre- and post-deposition annealing at 300°C, respectively. For Schottky barrier UV PDs with different seed layers, t...

wileyonlinelibrary.com detectivity of extrinsic photoconductive detectors depends on the ratio of optical carrier generation to thermal carrier generation. Traditionally, extrinsic silicon photodetectors have been limited by either high thermal impurity ionization or low optical carrier generation due to low absorption of sub-band gap radiation. Commonly used group III or V dopants (B, Al, Ga, ...

The electrical and photoelectrical properties of long wavelength nþppþ Hg1 xCdxTe structures have been optimized by using an exact numerical analysis. In this analysis we have been taking into account the degeneracy, non-parabolicty, deviation from thermodynamical equilibrium and graded interfaces. The band diagram, electrical field, carrier mobility, photoelectrical gain, responsivity, noise a...

The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular "fingerprint" imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost...

The two-dimensional layered semiconducting tungsten disulfide (WS2) film exhibits great promising prospects in the photoelectrical applications because of its unique photoelectrical conversion property. Herein, in this paper, we report the simple and scalable fabrication of homogeneous, large-size and transferable WS2 films with tens-of-nanometers thickness through magnetron sputtering and post...

Results of our many-particle Monte-Carlo modeling of kinetics and transport of electrons in InAs/GaAs quantum-dot infrared photodetectors are reviewed. We studied the dependence of the electron capture time on the electric field at different heights of the potential barriers around the dots. The capture time is almost independent on the electric field up to a critical field about 1 kV/cm, and t...

In this work, graphene-methylammonium lead iodide (MAPbI3) perovskite hybrid phototransistors fabricated by sequential vapor deposition are demonstrated. Ultrahigh responsivity of 1.73 × 107 A W-1 and detectivity of 2 × 1015 Jones are achieved, with extremely high effective quantum efficiencies of about 108% in the visible range (450-700 nm). This excellent performance is attributed to the ultr...