نتایج جستجو برای: dislocations

تعداد نتایج: 14284  

Journal: :Materials Today 2011

Journal: :Proceedings of the Royal Society of Medicine 1921

Journal: :Acta Crystallographica Section A Foundations of Crystallography 1989

Journal: :New Journal of Physics 2008

2015
Beñat Gurrutxaga-Lerma Daniel S. Balint Daniele Dini Adrian P. Sutton

The elastodynamic image forces on edge and screw dislocations in the presence of a planar-free surface are derived. The explicit form of the elastodynamic fields of an injected, quiescent screw dislocation are also derived. The resulting image forces are affected by retardation effects: the dislocations experience no image force for a period of time defined by the arrival and reflection at the ...

2016
Yadong Yu Xiaofei Yu Yanbin Bai Tao Wu Xinzhong Shao

Objective: To assess hand function after open reduction of acute and delayed perilunate dislocations. Methods: Seven patients (5 men) with perilunate dislocations were treated with open reduction and internal fixation. The injuries included 2 dorsal trans-radial perilunate dislocations, 4 trans-radial styloid perilunate dislocations, and one combined dorsal and styloid trans-radial dislocations...

2008
V. Vinogradov J. R. Willis

The paper addresses the problem of correlation within an array of parallel dislocations in a crystalline solid. The first two of a hierarchy of equations for the multi-point distribution functions are derived by treating the random dislocation distributions and the corresponding stress fields in an ensemble average framework. Asymptotic reasoning, applicable when dislocations are separated by s...

2017
Xiaohan Zhang

A 2-d dislocation pile-up model is developed to solve problems with arrays of edge dislocations on one or multiple slip planes. The model developed in this work has four unique features: 1) As a continuum mechanics model, it captures the discrete behaviors of dislocations including the region near pile-up boundaries. 2) It allows for a general distribution of dislocations and applied boundary c...

2006
B. S. Simpkins H. Zhang E. T. Yu

Scanning capacitance microscopy (SCM), atomic force microscopy (AFM), and conductive AFM are used to image the spatial distribution and electronic properties of threading dislocations in AlxGa1 xN/GaN epitaxial layers grown by molecular-beam epitaxy. SCM imaging reveals that GaN growth directly on SiC substrates leads to clustering of negatively charged dislocations at nucleation island boundar...

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