The drain current-voltage (I-V) characteristics of Schottky-barrier carbon nanotube FETs are computed via a self-consistent solution to the 2-D potential profile, the electron and hole charges in the nanotube, and the electron and hole currents. These out-of-equilibrium results are obtained by allowing splitting of both the electron and hole quasi-Fermi levels to occur at the source and drain c...

We have carried out an experimental study revealing that velocity saturation (usat) occurring in both the extrinsic source and drain sets a fundamental limit on maximum drain current and useful gate swing in HFET’s. Using AlGaAsl n f InCaAs HFET’s as a vehicle, we find that first gm and eventually f~ decline at high currents in two stages. Initially, the approach of vsat in the extrinsic device...

This study was conducted to evaluate the performance of DRAINMOD /DRAINMOD-N on an experimental drainage field at Southeast Purdue Agricultural Center (SEPAC), based on the comparison between observed and predicted subsurface drain flows and nitrate-nitrogen losses via drainage. The site was under conventional drainage management, consisting of two replications of three tile drain spacings—5m, ...

Carrier scatterings in the inversion channel of MOSFET dominates the carrier mobility and hence drain current. This paper presents an analytical model of the subthreshold drain current incorporating the effective electron mobility model of the pocket implanted nano scale n-MOSFET. The model is developed by assuming two linear pocket profiles at the source and drain edges at the surface and by u...

Background/Introduction Pneumothorax can be a complication following chest drain removal. In thoracic surgery, access to the pleural cavity involves a pleurotomy. A chest drain is inserted to allow re-expansion of the lungs post-pleurotomy. This also prevents a tension pneumothorax. Some patients have a residual pneumothorax post-chest drain removal noted on chest radiography. Rates of pneumoth...

The effect of gate length and Thickness on the characteristic curve of drain-source current verse gate voltage in ZnO and GaAs MOSFETs have been simulated. Three transistors with gate lengths of 30, 40 and 50 nm are simulated. Simulations show that with a fixed channel length, when the gate length is increases, the output drain current would be increased, the Moreover, with increasing oxide Thi...

Suction drains are commonly used in orthopedic elective and trauma surgery; however, drain tube removal causes pain, discomfort, and anxiety. A method of drain tube removal is described in patients who underwent total hip replacement and in adolescents who underwent lower extremity surgery. Ten milliliters of lidocaine was injected through the skin wound around the drain tube. The efficiency of...