We report on the ionic conductivity of Li0.33La0.55TiO3 (LLTO) epitaxial films grown on the (100) and (111) surfaces of single crystal SrTiO3 (STO) substrates at different oxygen partial pressures (from 1.33 to 26.66 Pa). The films are intended for use as solid electrolytes for all-solid-state Li-ion batteries, and the epitaxial growth for modeling the electrolyte single crystal properties. The...

Molecular Beam Epitaxy is a method for growing atomically thin lms of material. During epitaxial growth, atoms are deposited on a surface, where they hop randomly until attaching at the edges of partially completed atomic monolayers. This process has practical application to the fabrication of high speed semiconductor electronic devices. We have formulated a new model for epitaxial growth, the ...

Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction i...

New discoveries on collective processes in materials fabrication and performance are emerging in the mesoscopic size regime between the nanoscale, where atomistic effects dominate, and the macroscale, where bulk-like behavior rules. For semiconductor electronics and photonics, dimensional control of the architecture in this regime is the limiting factor for device performance. Epitaxial crystal...

Uniform epitaxial CoSi2 layers have been grown in situ on a ~100! Si substrate at temperatures above 600 °C by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co~h-C5H5!~CO!2 . Co-rich phases such as Co2Si and CoSi were suppressed during cobalt metallorganic chemical-vapor deposition at substrate temperatures above 500 °C. A thin carbon layer was found on the top of th...

Strain control of epitaxial films using piezoelectric substrates has recently attracted significant scientific interest. Despite its potential as a powerful test bed for strain-related physical phenomena and strain-driven electronic, magnetic, and optical technologies, detailed studies on the efficiency and uniformity of piezoelectric strain transfer are scarce. Here, we demonstrate that full a...

In order to sustain the historic progress in information processing, transmission, and storage, concurrent integration of heterogeneous functionality and materials with fine granularity is clearly imperative for the best connectivity, system performance, and density metrics. In this paper, we review recent developments in heterogeneous integration of epitaxial nanostructures for their applicati...

Thin films of ZnS have been deposited by MOCVD on both BaTa206/ITO/glass and Si substrates. Diethylzinc (DEZn) and H2S are used for deposition on substrates heated to the 250-400°C temperature range. The microstructure and properties of ZnS films were studied by X-ray diffractometry (XRD), ultraviolet/visible spectrophotometry (UVS) and scanning electron microscopy (SEM). Films prepared on BaTa...

Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole,...