Keywords: Level set method Epitaxial growth Diffusion Stefan problem Sharp interface Robin boundary condition a b s t r a c t We present a numerical method for simulating diffusion dominated phenomena on irregular domains and free moving boundaries with Robin boundary conditions on quadtree/ octree adaptive meshes. In particular, we use a hybrid finite-difference and finite-volume framework tha...

The effect of a secondary copper selenide phase that appears during epitaxial growth of CuInSe2 (CIS) films on (1 0 0) GaAs substrates was investigated. CIS films with different copper to indium molar ratios were deposited on (1 0 0) GaAs substrates at 360 1C by migration-enhanced epitaxy. Films grown under In-rich conditions were polycrystalline, whereas films grown with a Cu-rich composition ...

Gregory Beylkin, University of Colorado, Boulder Fast Algorithms for Adaptive Application of Integral Operators in High Dimensions In physics, chemistry and other applied fields, many important problems may be formulated using integral equations, typically involving Green’s functions as their kernels. Often such formulations are preferable to those via partial differential equations (PDEs). For...

A brief introduction is given to Kinetic Monte Carlo (KMC) simulations of epitaxial crystal growth. Molecular Beam Epitaxy (MBE) serves as the prototype example for growth far from equilibrium. However, many of the aspects discussed here would carry over to other techniques as well. A variety of approaches to the modeling and simulation of epitaxial growth have been applied. They range from the...

The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors. Here we demonstrate the principle of epitaxial growth of III-V...

Atomically thin semiconducting oxide on graphene carries a unique combination of wide band gap, high charge carrier mobility, and optical transparency, which can be widely applied for optoelectronics. However, study on the epitaxial formation and properties of oxide monolayer on graphene remains unexplored due to hydrophobic graphene surface and limits of conventional bulk deposition technique....

The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor-liquid-solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200 °C. The needle-shaped Si nan...

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized...

We report on electrical properties and microstructure of epitaxial thin NbN films grown on 3C-SiC/Si substrates by means of reactive magnetron sputtering. A complete epitaxial growth at the NbN/3C-SiC interface has been confirmed by means of high-resolution transmission electron microscopy (HRTEM) along with x-ray diffractometry (XRD). Resistivity measurements of the films have shown that the s...

Hybrid interfaces between ferromagnetic surfaces and carbon-based molecules play an important role in organic spintronics. The fabrication of devices with well defined interfaces remains challenging, however, hampering microscopic understanding of their operation mechanisms. We have studied the crystallinity and molecular ordering of C60 films on epitaxial Fe/MgO(001) surfaces, using X-ray diff...