High-k dielectric materials are being considered as replacement for SiO2 as the gate dielectric while retaining the low equivalent oxide thickness (EOT) required next generation metal oxide semiconductor field effect transistors (MOSFETs). In this paper, we simulate the capacitance – voltage (C-V) of n-type MOSFET devices with different high-k dielectric insulator numerically. According to the ...

This article introduces and applies the concept of “physical-equivalent privacy” to evaluate appropriateness data collection about library patrons’ use library-provided e-resources. It po...

Liquid foams were recognized early to be porous materials, as liquid flowed between the gas bubbles. Drainage theories have been established, and foam permeability has been modeled from the microscopic description of the equivalent pores geometry, emphasizing similarities with their solid counterparts. But to what extent can the theoretical work devoted to the permeability of solid porous mater...

Ahstraet-A stress resultant constitutive law in rate form is constructed for power-law hardening materials. The change of plate thickness is considered in the constitutive law. The elastic-plastic behavior of a plate element based on the stress resultant constitutive law under uniaxial combined tension and bending is determined under a limited number of nonproportional and unloading paths. The ...

Transverse thermoelectric elements have the potential to decouple the electric current and the heat flow, which could lead to new designs of thermoelectric devices. While many theoretical and experimental studies of transverse thermoelectricity have focused on layered structures, this work examines composite materials with aligned fibrous inclusions. A simplified mathematical model was derived ...