The structure of gallium arsenide and indium phosphide (0 0 1) surfaces in the metalorganic vapor-phase epitaxy (MOVPE) environment has been investigated. During growth at V/III ratios in excess of 10, both materials are terminated with group V ad-dimers (As or P), alkyl groups and hydrogen atoms. These species sit on top of a complete layer of the group V atoms. As the V/III ratio decreases, t...

Boron arsenide, the typically-ignored member of the III–V arsenide series BAs–AlAs–GaAs– InAs is found to resemble silicon electronically: its Γ conduction band minimum is p-like (Γ15), not s-like (Γ1c), it has an X1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked...

High performance RF switches are among the key building blocks required in modern wireless communication systems. Switches that provide low insertion loss, high isolation between ports, low distortion and low current consumption are much sought after for high frequency applications such as phase shifters, switchable filters, transmitters and receivers for radar systems—ranging from large instal...

An efficient diagonally symmetric infinity-shaped broadband solar absorber has been demonstrated in this research paper. The structure was developed with an resonator made of titanium (Ti) and gallium arsenide (GaAs) at the base substrate layer to achieve absorption a wideband spectrum under energy radiation, efficiencies were calculated employing finite element method. average ranges from ultr...

Modelling the current–voltage (I–V) characteristics of photovoltaic (PV) devices is important for understanding their behaviour and potential. Typically, single exponential model (SEM) used because its simplicity accuracy. In this work, we validate SEM a gallium arsenide (GaAs) vertical-tunnel-junction (VTJ) using TCAD software. This cell key to overcoming series resistance limitations current ...

Optical Measurement of Electron Spin Lifetimes in Gallium Arsenide Dallas Carl Smith Department of Physics and Astronomy Bachelor of Science We measured T1 spin lifetimes for electrons in gallium arsenide at various magnetic field strengths. To perform these measurements, we initialized and probed the spin states using optical techniques. By changing the delay between the initializing (pump) an...

1. Introduction With the diversifying functions and increasing traffic of recent satellite communications, the amplifiers installed in satellites must provide higher power and improved efficiency. Commonly-used satellite-mounted amplifiers are, in general, either traveling wave tube amplifiers (TWTAs) or solid state power amplifiers (SSPAs) using gallium arsenide field-effect transistors (GaAs ...