We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between lg = 140 nm and lg = 300 nm is carried out. Several aspects, including thermal and breakdown...

We propose and analyze an interface between a topological qubit and a superconducting flux qubit. In our scheme, the interaction between Majorana fermions in a topological insulator is coherently controlled by a superconducting phase that depends on the quantum state of the flux qubit. A controlled-phase gate, achieved by pulsing this interaction on and off, can transfer quantum information bet...

−The EKV model, a continuous model for the MOS transistor, has been adapted to both partially depleted SOI MOSFETs with grounded body (GBSOI) and dynamic threshold MOS (DTMOS) transistors. Adaptation is straightforward and helps to understand the physics of the DTMOS. Excellent agreement is found between the model and the measured characteristics of GBSOI and DTMOS devices Index Terms− Silicon-...

Two-dimensional electron systems offer enormous opportunities for science discoveries and technological innovations. Here we report a dense electron system on the surface of single-crystal vanadium dioxide nanobeam via electrolyte gating. The overall conductance of the nanobeam increases by nearly 100 times at a gate voltage of 3 V. A series of experiments were carried out which rule out electr...

Admittance spectroscopy is employed to explain the property differences observe between organic thin film transistors (OTFTs) fabricated with various gate insulator layers based on poly(4-vinylphenol) (PVP) and poly(methyl methacrylate) (PMMA). The objective achieved through development of an equivalent circuit a compact analytical model device core structure, namely, metal–insulator–semiconduc...

We report the observation of the positively charged exciton and of the triplet state of the negatively charged exciton in modulation doped GaAs quantum wells. Applying a gate voltage at high magnetic fields we find that the photoluminescence line of the two-dimensional electron gas smoothly transforms into a negatively charged exciton and not into a neutral exciton. The Zeeman splitting of this...

Titanium dioxide has been deposited on silicon for use as a high-permittivity gate insulator in an effort to produce low-leakage films with oxide equivalent thicknesses below 2.0 nm. Excellent electrical characteristics can be achieved, but TEM and electrical measurements have shown the presence of a low-resistivity interfacial layer that we take to be SiO2. The leakage current follows several ...

Sun-Yong Hwang,1,2 Rosa López,1,3 Minchul Lee,4 and David Sánchez1,3 1Institut de Fı́sica Interdisciplinària i Sistemes Complexos IFISC (CSIC-UIB), E-07122 Palma de Mallorca, Spain 2Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea 3Kavli Institute for Theoretical Physics, University of California, Santa Barbara, California 93106-4030, USA 4Department of Applied Physic...