نتایج جستجو برای: giant axonal neuropathy
تعداد نتایج: 119020 فیلتر نتایج به سال:
We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2 microm-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The Dependence of etching depth on etching time for the implantation at different ion fluences was investigated. The experiment showed that the damaged GaN area could be almost etched out at high ion flu...
This research was supported by the National Natural Science Foundation of China (Project Number 31070913) and also in part by grants from the Chinese National Office for Education Sciences Planning (Project Number DBA080173). Correspondence concerning this article should be addressed to Yiqun Gan, Department of Psychology, Peking University, Beijing 100871, China. E-mail: [email protected] Future...
Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs). We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrink...
GaN buffer deep level centers are studied coupling measurements and device physics simulations. The impact of Feand C-doped samples on low frequency device transconductance and noise is presented. The Felevel found at 0.7 eV below the GaN conduction band results in low frequency generation-recombination noise and transconductance dispersion. The agreement with the model shows that the buffer ca...
This paper presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna design approach. A microstrip patch antenna designed at the second harmonic is integrated with the HEMT. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate periphery, a 4 8 GHz frequency doubler was designed by the suggested des...
Type-II band alignment structure is coveted in the design of photovoltaic devices and detectors, since it is beneficial for the transport of photogenerated carriers. Regrettably, for group-III-nitride wide bandgap semiconductors, all existing devices are limited to type-I heterostructures, owing to the unavailable of type-II ones. This seriously restricts the designing flexibility for optoelect...
Nanowires made of materials with noncentrosymmetric crystal structure are under investigation for their piezoelectric properties and suitability as building blocks for next-generation self-powered nanodevices. In this work, we investigate the size dependence of piezoelectric coefficients in nanowires of two such materials - zinc oxide and gallium nitride. Nanowires, oriented along their polar a...
Due to the wide band gap energy and high breakdown electric field of GaN, heterostructure transistors made from it are promising candidates for high power and high frequency applications. However, one issue that prevents the wide deployment of GaN HEMTs is their reliability. Research has been actively trying to improve the reliability of these devices. In spite of this, detailed understanding o...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید