نتایج جستجو برای: graphene nanoribbon fet
تعداد نتایج: 53438 فیلتر نتایج به سال:
Local curvature, or bending, of a graphene sheet is known to increase the chemical reactivity presenting an opportunity for templated chemical functionalisation. Using first-principles calculations based on density functional theory (DFT), we investigate the reaction barrier reduction for the adsorption of atomic hydrogen at linear bends in graphene. We find a significant barrier lowering (≈15%...
Leveraging nanotechnology for computing opens up exciting new avenues for breakthroughs. For example, graphene is an emerging nanoscale material and is believed to be a potential candidate for post-Si nanoelectronics due to high carrier mobility and extreme scalability. Recently, a new graphene nanoribbon crossbar (xGNR) device was proposed which exhibits negative differential resistance (NDR)....
Results are presented from an experimental and theoretical study of the electronic properties of back-gated graphene field effect transistors (FETs) on Si/SiO(2) substrates. The excess charge on the graphene was observed by sweeping the gate voltage to determine the charge neutrality point in the graphene. Devices exposed to laboratory environment for several days were always found to be initia...
Armchair graphene nanoribbons are considered unsuitable for spin caloritronic applications, due to the lack of intrinsic magnetism. Inspired by progress on fabricating carbon nanotubes with Janus edges Bets et al. (2019) [26], we construct edges, where one edge is armchair type and other possesses triangular protrusions zigzag-armchair or zigzag-zigzag sub-edges. By first-principles calculation...
graphene nanoribbon: A theoretical study Z. F. Wang, Qunxiang Li, Q. W. Shi, Xiaoping Wang, Jinlong Yang, J. G. Hou, and Jie Chen Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China Department of Electrical and Computer Engineering, University of Alberta, AB T6G 2V4, Canada and National Res...
Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Such information is not yet available for QDs made out of the new material graphene, where both substrate and edge states are known to have important effects. Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET), increa...
Abstract Graphene nanoribbons synthesized using bottom-up approaches can be structured with atomic precision, allowing their physical properties to precisely controlled. For applications in quantum technology, the manipulation of single charges, spins or photons is required. However, achieving this at level graphene experimentally challenging due difficulty contacting individual nanoribbons, pa...
A graphene nanoribbon with zigzag edges has a gapped magnetic ground state with an antiferromagnetic interedge superexchange interaction. We present a theory based on asymptotic properties of the Dirac-model ribbon wave function which predicts W-2 and W-1 ribbon-width dependencies for the superexchange interaction strength and the charge gap, respectively. We find that, unlike the case of conve...
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