Hafnium oxide (HfO2) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO2 ...

Nanocrystalline hafnium oxide (HfO2) thin films have been produced under variable reactive oxygen (O2) fractionation (Г) employing Hf metal for reactive sputter-deposition. The effect of Г on the HfO2 compound formation, structure, morphology and optical properties has been evaluated. Without oxygen, the films of hexagonal phase of Hf metal were grown. Films grown at different O2 pressure are n...

We present a simulation study on negative bias temperature instability (NBTI) induced hole trapping in E' center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the two-stage NBTI model. The resulting degradation is characterized based on the time evolution of the interface and hole trap densities, as well...

Oxygen-related point defects can provide fixed charge or act as charge trapping centers in high-k gate stacks and, therefore, their origins and properties are of great interest. In this paper, reported experimental and theoretical results related to oxygen defects in HfO2 gate dielectrics are reviewed critically to assess the relative importance of different defect species in terms of their ele...

This work illustrates the use of polystyrene brushes for area selective deactivation against a hafnium atomic layer deposition process. The effect that thickness this brush has on its ability to block process is also shown.

Erratum The original publication [1] is missing the funding information in the acknowledgement. The missing part can be found here: " Reference 1. (2017). The influence of hafnium doping on density-of-states in zinc oxide thin-film transistors deposited via atomic layer deposition. Nanoscale Res. permits unrestricted use, distribution, and reproduction in any medium, provided you give appropria...

As part of an extended program to study the fine scale chemistry of the matrix and grain boundary area of doped and alloyed Ni3A1, experiments were initiated to determine the effects of various atom probe parameters on the accuracy of measured concentrations. Samples of arc-melted as well as rapidly cooled Ni3A1 containing boron, iron and hafnium were used. The distribution of solutes in the ma...

We report the design of dielectric-filled anti-reflection coated (ARC) two-dimensional (2D) metallic photonic crystals (MPhCs) capable of omnidirectional, polarization insensitive, wavelength selective emission/absorption. Using non-linear global optimization methods, optimized hafnium oxide (HfO2)-filled ARC 2D Tantalum (Ta) PhC designs exhibiting up to 26% improvement in emittance/absorptance...

The composition of polycrystalline hafnium oxide thin films has been measured by heavy-ion elastic recoil detection analysis (HI-ERDA). The films were deposited by high-pressure reactive sputtering (HPRS) with oxygen plasma at pressures between 0.8 and 1.6 mbar and during deposition times between 0.5 and 3.0 hours. Hydrogen was found to be the main impurity and its concentration increased with ...

The coordination chemistry of zirconium and hafnium complexes containing the tridentate amine biphenolate ligands [RN(CH2-2-O-3,5-C6H2(tBu)2)2](2-) ([R-ONO](2-); R = tBu (1a), iPr (1b), nPr (1c)) featuring distinct N-alkyl substituents is described. Alcoholysis of Zr(OiPr)4(HOiPr) or Hf(OiPr)4(HOiPr) with H2[1a] in diethyl ether solutions at -35 °C generates the corresponding five-coordinate [1...