The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that the electric field in p-doped silicon can induce a dissipationless orbital current in a fashion reminiscent of the spin Hall effect. The vertex correction due to impurity scatterin...

The compatibility of some Hall sensors with CMOS electronics allows the co-integration of sensors and electronics on the same chip to obtain a low costmicrosystem. In addition to a careful sensor design, the relationships betweenthe system components, i.e. sensors and electronics, allow us to improvesubstantially the behavior of the microsystem. The first objective of this thesi...

We report on a comparative study of spin Hall related effects and magnetoresistance in YIG|Pt and YIG|Ta bilayers. These combined measurements allow to estimate the characteristic transport parameters of both Pt and Ta layers juxtaposed to yttrium iron garnet (YIG): the spin mixing conductance G↑↓ at the YIG|normal metal interface, the spin Hall angle SH, and the spin diffusion length λsd in th...

Anomalous spin Hall effects that belong to the intrinsic type in Dresselhaus (110) quantum wells are discussed. For the out-of-plane spin component, antisymmetric current-induced spin polarization induces opposite spin Hall accumulation, even though there is no spin-orbit force due to Dresselhaus (110) coupling. A surprising feature of this spin Hall induction is that the spin accumulation sign...

My current research lies in the fields of quantum algebra and representation theory. In particular, my recent work has studied the structure theory of quantum groups via Hall algebras. This work has also touched on aspects of category theory as a tool for gaining insight into the underlying details. In Section 2 I describe the motivation and basic ideas of Hall algebras. In Section 3 I describe...

In the framework of the edge-channel picture and the scattering approach to conduction, we discuss the low frequency admittance of quantized Hall samples up to second order in frequency. The first-order term gives the leading order phase-shift between current and voltage and is associated with the displacement current. It is determined by the emittance which is a capacitance in a capacitive arr...

We report the detection of the inverse spin Hall effect (ISHE) in n-gallium arsenide (n-GaAs) combined with electrical injection and modulation of the spin current. We use epitaxial ultrathin-Fe/GaAs injection contacts with strong in-plane magnetic anisotropy. This allows us to simultaneously perform Hanle spin-precession measurements on an Fe detection electrode and ISHE measurements in an app...

We show that the extrinsic spin Hall effect can be engineered in monolayer graphene by decoration with small doses of adatoms, molecules, or nanoparticles originating local spin-orbit perturbations. The analysis of the single impurity scattering problem shows that intrinsic and Rashba spin-orbit local couplings enhance the spin Hall effect via skew scattering of charge carriers in the resonant ...

We show that pure spin Hall current, flowing out of a four-terminal two-dimensional electron gas (2DEG) within inversion asymmetric heterostructure, contains contributions from both the extrinsic mechanisms (spin-orbit-dependent scattering off impurities) and the intrinsic ones (due to the Rashba coupling). The extrinsic contribution vanishes in the weakly and strongly disordered limits, and th...

This work studies the effects of an aluminum covering on the performance of cross-like Hall devices. Four different Hall sensor structures of various sizes were designed and fabricated. The sensitivity and offset of the Hall sensors, two key points impacting their performance, were characterized using a self-built measurement system. The work analyzes the influences of the aluminum covering on ...