نتایج جستجو برای: high electron mobility transistor
تعداد نتایج: 2357262 فیلتر نتایج به سال:
The fundamental limits of the microwave noise performance high electron mobility transistors (HEMTs) are scientific and practical interest for applications in radio astronomy quantum computing. Self-heating at cryogenic temperatures has been reported to be a limiting mechanism noise, but cooling strategies mitigate it, instance using liquid cryogens, have not evaluated. Here, we report measurem...
Metamorphic buffers ~M-buffers! consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors ~M-HEMTs!, while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology an...
We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron mobility transistor (HEMT) structures for a special case. Extraction of the conduction channels from the magnetic field-dependent data can present number of problems; ev...
Imaging the coupling of terahertz radiation to a high electron mobility transistor in the near-field
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید