The paper examines Axiomatic Design in the light of its possible links to an evolved version of the Theory of Inventive Problem Solving, TRIZ. The paper highlights incompatibilities between the the Independence Axiom and the Ideality concept contained within TRIZ, but also several areas of mutually beneficial integration between the two methods – at philosophical, methodological and working too...

Starting from an electrical dissipative illuminated one-diode solar cell with a given model data at room temperature (I sc , V oc , R s0 , R sh0 , I max ); we present under physical considerations a specific mathematical method (using the Lambert function) for unique determination of the intrinsic electrical parameters (n, I s , I ph , R s , R sh ). This work proves that for a given arbitrary f...

The structure of the ADP complex of the enzyme 3phosphoglycerate kinase (PGK, E.C. 2.7.2.3) from Bacillus stearothermophilus NCA-1503 has been determined by the method of molecular replacement. The structure has been refined to an R factor of 0.16 for all data between 10.0 and 1.65A resolution, using data collected on the Hendrix-Lentfer imaging plate at the EMBL outstation in Hamburg. The r.m....

An electrochemical surface treatment has been developed that decreases the reverse-bias leakage current in Schottky diodes fabricated on GaN grown by molecular-beam epitaxy ~MBE!. This treatment suppresses current flow through localized leakage paths present in MBE-grown GaN, while leaving other diode characteristics, such as the Schottky barrier height, largely unaffected. A reduction in leaka...

Asymmetric contacts or split gate geometries can be used to obtain rectification, electroluminescence (EL) and photocurrent from carbon nanotube field effect transistors. Here, we report devices with both split gates and asymmetric contacts and show that device parameters can be optimised with an appropriate split gate bias, giving the ability to select the rectification direction, modify the r...

The current transport mechanism through porous silicon ~PS! films fabricated from 8 to 12 V cm p-type silicon (p-Si) substrates has been investigated using current–voltage I(V) measurements on metal/PS/p-Si/metal devices in the temperature range of 77–300 K. The characteristics for all devices show a rectifying behavior with ideality factor very close to unity. A value of 0.7 eV is obtained for...

This paper reported extensive study and research proposal of Post simulation and behavioral modeling of Second Order sigma-delta modulator BIST technique in which include non-ideality factor such as offset error and clock jitters. For the test of the digital parts, BIST techniques have been developed and are broadly implemented in current chips. BIST technique not only avoids depending on the o...

Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range 20 °C - 120 °C are presented. The results show consistent performance among devices. Their leakage current density, at the highest investigated ...

Selectivity control in silicon selective epitaxial growth (SEG) for deep contact patterns, which is one of the key processes for silicon-based stacked devices and cell switches for next generation memories, was studied. Absolute values of selectivity loss during silicon SEG using the most popular H2/dichlorosilane (DCS)/HCl gas system were evaluated using a commercialized inspection tool in 200...

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had ...