نتایج جستجو برای: in 111
تعداد نتایج: 16983554 فیلتر نتایج به سال:
Authors' A “L. e A. Se of Nuclear Bologna, B “Spedali Ci Novara, Ita Torino, Ital and 7Dep “La Sapien Elena” Hos Correspon Medical On University 39-051636
Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achie...
This paper compares charge transport across self-assembled monolayers (SAMs) of n-alkanethiols containing odd and even numbers of methylenes. Ultraflat template-stripped silver (Ag(TS)) surfaces support the SAMs, while top electrodes of eutectic gallium-indium (EGaIn) contact the SAMs to form metal/SAM//oxide/EGaIn junctions. The EGaIn spontaneously reacts with ambient oxygen to form a thin (∼1...
Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transis...
Any device exposed to ambient conditions will be prone to oxidation. This may be of particular importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using a focused laser beam. Polarization dependent m...
Articles you may be interested in Waveguide-integrated photonic crystal spectrometer with camera readout Appl. Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers Appl.
J. Ibáñez,1,* R. Oliva,1 F. J. Manjón,2 A. Segura,3 T. Yamaguchi,4 Y. Nanishi,4 R. Cuscó,1 and L. Artús1 1Institut Jaume Almera, Consell Superior d’Investigacions Cientı́fiques, 08028 Barcelona, Catalonia, Spain 2Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team-Universitat Politècnica de València, 46022 València, Spain 3Departamento de Fı́sica Aplicada-ICMU...
We demonstrate that liquid metals support surface plasmon-polaritons (SPPs) at terahertz (THz) frequencies, and can thus serve as an attractive material system for a wide variety of plasmonic and metamaterial applications. We use eutectic gallium indium (EGaIn) as the liquid metal injected into a polydimethylsiloxane (PDMS) mold fabricated by soft lithography techniques. Using this approach, we...
An arene-terminated epoxy olefin cyclization was promoted by a water-tolerant Lewis acid to give tri- and tetracyclic 3beta-hydroxy terpenoids and steroid derivatives in 57 and 37% yields, respectively, per new formed ring up to 75%.
InAlAs/n+-InGaAs HFET’s have demonstrated a high breakdown voltage in spite of their narrow channel bandgap. In order to understand this unique feature, we have canied out a systematic study in a range of temperatures around room-temperature. We find that for HFET’s with L ~ = 1 . 9 pm, breakdown is drain-gate limited and is a two-step process. First, electrons are emitted from the gate to the ...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید