The Internet of Things (IoT) is becoming increasingly popular in areas like wearable communication devices, biomedical and home automation systems. IoT-compatible processors or devices need larger integrated memory circuits, static random access (SRAM). design such a with fast times low leakage challenge. In this article, we have proposed 7T SRAM cell using an InGaAs-dual pocket-dual gate-tunne...

A new Monolithic InGaAs Active Pixel Multispectral Image Sensor is described. This Infrared sensor will utilize high quality InGaAs grown by Molecular Beam Epitaxy on InP substrate for the fabrication of a high speed Junction Field Effect Transistor array. In -X Ga As is a Ill-V alloy whose cutoff wavelength can be tuned from 0.8 jim (GaAs) to 3.5 jim (InAs). Due to the spectral windows of 3-5 ...

An extended short-wavelength infrared microspectrometer by monolithic integrarion of a 256 × 1 InGaAs linear array detector with wedge-shaped Si/SiO 2 Fabry-Perot variable optical filter.

III-V compound semiconductors can exist in two major crystal phases, namely, zincblende (ZB) and wurtzite (WZ). While ZB is thermodynamically favorable in conventional III-V epitaxy, the pure WZ phase can be stable in nanowires with diameters smaller than certain critical values. However, thin nanowires are more vulnerable to surface recombination, and this can ultimately limit their performanc...

In this work, we use a variant of the drift-diffusion equations to investigate nonlinearity of a cylindrical pi-n heterojunction photodetector made from InP and InGaAs [2]. Earlier work has shown that this model can accurately reproduce the principal features of experiments even with simple one-dimensional (1D) simulations if the effective radius of the current flow is properly chosen [2]. An a...

This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-source molecular beam epitaxy (SS-MBE) and investigated via photoluminescence (PL), spectroscopic ellipsom...

∗To whom correspondence should be addressed †University of Erlangen ‡Caltech uum light source is spectrally filtered by a programmed acousto-optic tunable filter (operated at λ = 1200− 1850nm) (NKT Koheras, SuperK Extreme) and is subsequently directed through a polarization filter (1) and a non-polarizing beam splitter (NPBS), that directs 50% of the power to a reference diode (InGaAs). The mai...

Single photon detectors sensitive to near-infrared (NIR) wavelength light are used in an increasing number of applications, such as quantum key distribution, laser detection and ranging, and integrated circuit analysis. There are many types of NIR single photon detectors, e.g. photomultiplier tube, superconducting single photon detector and single photon avalanche diode (SPAD). However, the SPA...

Recently, III-V gate-all-around (GAA) nanowire MOSFETs or III-V 3D transistors have been experimentally demonstrated by a top-down approach [1-2] , showing excellent scalability down to channel length (Lch) of 50nm. Although parallel integration of the InGaAs nanowires have been successfully demonstrated in Ref. [1] delivering high drive current per wire, the overall current drivability of the ...