This paper considers the turn-off robustness (the maximal current being able to be turned off) of high power IGBTs under over current condition. The analysis of turn-off curves shows that the turn-off robustness of the investigated devices is not really limited by the rate of voltage rise on collector-emitter (dVCE / dt ). The main reason of the robustness limitation is found out to be the rate...

Silicon dice soldered in power assemblies have to withstand simultaneously electrical, thermal and mechanical stress. Mechanical stress is an important issue because it will directly impact on both the device behaviour and power modules reliability. This paper focuses on the electro-mechanical static characterization of a planar gate IGBT by the help of experiments at controlled temperatures. A...

The effectiveness and reliability of the unified power flow controller (UPFC) are determined by insulated gate bipolar transistor (IGBT) valve. Thermal losses, conduction switching losses in IGBT valve all affect efficiency UPFC. failure rate converter valves is influenced junction temperature, which has an impact on converter's reliability. Piecewise linear electrical circuit simulation (PLECS...

345 Abstract—In this paper Static Synchronous Compensator (STATCOM) is used for voltage stability and the compensation of reactive power. The STATCOM contains an Insulated Gate Bipolar Transistor (IGBT) based voltage source converter for voltage control and reactive power compensation. The STATCOM is used to control the reactive power with the voltage source converter in combination with a DC v...

SLIDING-MODE control is a control technique used widely in electromechanical systems today [1–4]. It bases on using main characteristics of modern inverter semiconductor switches as Insulated Gate-Commutated Transistors (IGCTs) or Insulated-Gate Bipolar Transistors (IGBTs) that are operating in switch mode with distinctly higher switching frequency [5] than formerly used Gate-Turn-Off Thyristor...

This paper presents an accurate, yet computationally effective, 3-D simulation strategy devised for the UIS analysis of multicellular power transistors, which accounts for electrothermal effects and is based on a circuit representation of the whole device under test. The approach is exploited to examine the correlation between the shape of the avalanche curve of IGBTs and the physical mechanism...

An improved analytical model for IGB power transistors has been developed for circuit simulators. Special attention is paid to the physical modeling of the short channel in the DMOS branch and the buffer layer near the anode in IGBT device structures. Good agreement between simulated and measured data has been obtained.

Motion control plays a vital role in industrial atomization. Different types of motors AC, DC, SERVO or stepper are used depending upon the application; of these DC motors are widely used because of easier controlling. Among the different control methods for DC motor armature voltage control method using pulse width modulation (PWM) is best one. We can realize the PWM using H-bridge built with ...

A new control technique for the 7-phase permanent magnet synchronous machine (PMSM) when a failure in speed sensor is introduced. This will make whole drive system more robust and at same time reduce cost. The position of shaft motor are obtained by tracking saturation saliency occurred. proposed saliency-tracking algorithm based on measuring derivative stator currents after switching insulated...