The electron mobility in Al2O3/InxGa1−xAs (x = 0.53, 0.65, or 0.75) metal–oxide–semiconductor field-effect transistors was analyzed for scattering by oxide charge, as well as interface charge and roughness, and compared with measured transfer characteristics from depletion to inversion. The analysis showed that, under strong inversion, the electron mobility was mainly limited by interface rough...

The spontaneous formation of a thread-like pattern with negatively charged lipids on an oil/water interface is reported. An analysis of the time-dependent change at the interface observed by fluorescence microscopy revealed that the thread-like pattern is generated through a two-step mechanism. First, inverted lipid micelles in the bulk-oil phase gradually diffuse onto the oil/water interface. ...

In order to study the variation law of shear frictional characteristics steel pipe jacking and sand interface under different working conditions, stress–strain curve between five particle sizes normal stress slurry lubrication conditions was measured by using a direct device, internal friction angle, coefficient cohesion pipe–soil were calculated regression analysis. The test results show that ...

The exciton decay rate at a rough interface in type-II semiconductor super-lattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plane interface essentially affects kinetics of the exci-ton photoluminescence at a rough interface. This happens because of strong correlation between the exciton recombination at the plane interface and at the roughnes...