Ion plating is essentially vapor deposition onto a substrate which is the cathode of a glow discharge. The most important characteristic of the technique is that the growing film is subjected to a flux of high energy particles (neutrals and ions). In this study we report information about the effect of ion plating parameters on grain diameter and crystallite size distribution. At a constant pot...

Using Solvent Evaporating and Atomic Emission Spectrophotometric methods, the solubility of Li2CO3 in waterat 25°C was determined. Comparing the value of thermodynamic solubility product constant, Ksp(th),(Ksp(tn) = exp(—AG.ss/RT)) of the mentioned salt to the value which is obtained from the observed solubility,shnolL-1 , and activity coefficients, f+ and f, which are estimated upon the extend...

Atomic mixing and preferential sputtering impose a depth resolution limit on the use of sputter sectioning to measure the composition of metal-semiconductor interfaces. Experimental evidence obtained with the Pt-Si system is used to .demonstrate ion-induced atomic mixing and then its effect on sputter etching and depth profiling. Starting with discrete layer structures, a relatively low ion dos...

Dissociation kinetic analysis of a complex of Ce(3+) with a polyaminocarboxylic ligand, 8-amino-2-[(2-amino-5-methylphenoxyl)methyl]-6-methoxyquinoline-N,N,N',N',-tetraacetic acid (Quin2), was studied by microchip capillary electrophoretic reactor. Dissociation rate constants, k(d), of Ce(3+)-Quin2 complex in alkaline conditions at pH 8.3 - 9.8 were determined. The linear relationship of k(d) w...