The processes of modifying the structural and optical properties FP9120 S1813 diazoquinone–novolac photoresist films on single-crystal silicon wafers beyond range ions by implantation light B+, P+ heavy Sb+ have been studied using techniques attenuated total reflection Fourier-transform IR spectroscopy, indentation, measurement spectra. It has shown that during B+ ions, involving photosensitive...

Despite more than two decades of intensive research, ion implantation in group III nitrides is still not established as a routine technique for doping and device processing. The main challenges to overcome are the complex defect accumulation processes, well high post-implant annealing temperatures necessary efficient dopant activation. This review summarises contents plenary talk, given at Appl...