Metal-clad subwavelength lasers have recently become excellent candidates for light sources in densely packed chip-scale photonic circuits. In this review, we summarize recent research efforts in the theory, design, fabrication, and characterization of such lasers. We detail advancements of both the metallodielectric and the coaxial type lasers: for the metallo-dielectric type, we discuss opera...

A high-average power, laser-diode-pumped, picosecond-pulse regenerative chirped pulse amplifier was developed by using the thin-rod Yb:YAG laser architecture. An average output power of 20 W was achieved at a repetition rate of 100 kHz with an output pulse width of 2 ps. 2008 Optical Society of America OCIS codes: (140.3280) Lasers, amplifiers, (140.3615) Lasers, ytterbium, (140.3480) Lasers, ...

The amplitude-phase coupling factor a (linewidth enhancement factor) is compared in typical semiconductor quantum-well and bulk double heterostructure lasers. As a direct consequence of the reduction of the differential gain, there is no reduction of a in the single quantum-well lasers compared to the bulk lasers. The number of quantum wells strongly affects the amplitude-phase coupling in quan...

Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations. While laboratory-scale lasers with extraordinarily high stability and low noise have been reported, all-integrated chip-scale devices with sub-100 Hz linewidth have not been previously demonstrated. Lasers integrated with opt...

Past research efforts have attempted to demonstrate semiconductor lasers with reduced levels of phase noise, approaching noise levels typically observed in highly coherent solid state lasers. In this work, detailed phase noise measurements have been performed on an expanded-mode, external cavity semiconductor laser with a longer cavity length and much higher output power than similar commercial...

Compared to traditional lasers, diode lasers are generally small, reliable and easy to operate. However, tuning characteristics of many commercially available standard diode lasers are often far from ideal. External Cavity Diode Lasers (ECDL), in which antirefl ection (AR) coated Fabry Perot laser diodes can be utilized, provide an attractive alternative with wavelength tuning ranges of up to 1...

We have experimentally demonstrated current-injection optical phase-lock loops (OPLLs) based on commercial single-section semiconductor distributed-feedback (DFB) lasers. Using two parallel OPLLs, we have obtained 87% efficient coherent power combining of the two DFB lasers. The rms differential phase error between the two lasers is about 30 degrees .

A monolithically integrated device combines 40 GHz dual mode-locked operation with the wide tuning range (>40nm) of sampled-grating DBR lasers, while further being integrated to an SOA and a potentially high-speed modulator. OCIS codes: (250.5300) Photonic integrated devices; (140.3600) Lasers, tunable; (140.4050) Mode-locked lasers

Articles you may be interested in MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasers Appl. 1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature Appl.

We discuss the use of photorefractive four-wave mixing for coupling and locking of lasers. A demonstration of the double phase-conjugate mirror and the semilinear passive phase-conjugate mirror, pumped simultaneously by different lasers, is described. Cleanup of a distorted laser beam using another local laser and configurations for the phase locking of lasers are discussed.