Gate and drain current noise investigations are performed on nMOS transistors with HfO2 gate oxides. The drain noise magnitude allows extraction of the slow oxide trap density Nt(EF) ranging from 3 to 7 10 eV cm. These values are about 50 times higher than for SiO2 dielectrics. The 1/f gate current noise component is a quadratic function of the gate leakage current. The gate noise parameter KGC...

The present paper investigates the effects of the trapezoidal teeth labyrinth seal on the leakage amount in gas turbines. The influences of increasing the number of teeth from 1 to 6 with step 1 and the tip clearance s=0.5 to 7.5 mm on the leakage flow at different pressure ratios of PR=1.5, 2 and 2.5 are examined, comprehensively. The analysis is performed numerically using a Finite-Volume...

Main concepts in DSP include filtering, averaging, modulating, and correlating the signals in digital form to estimate characteristic parameter of a signal into a desirable form. This paper presents a brief concept of low power datapath impact for Digital Signal Processing (DSP) based biomedical application. Systolic array based digital filter used in signal processing of electrocardiogram anal...

The efficiency optimization of a feedforward low distortion power amplifier is presented. Based on the principle of distortion compensation, the main amplifier output power, that of subamplifier, and amplifier efficiency have been accurately derived. In the present analysis, the coupling coefficient of main signal and distortion paths is selected as the optimization parameter because it may ess...

In present scenario high voltage AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si substrate with Schottky drain contacts were simulated to increase the breakdown voltage by replacing the conventional Ohmic drain contacts. A significant increase in breakdown voltage values was achieved for nonannealed Schottky contacts by elimination of metal spikes underneath drain electrodes. The bre...

S U M M A R Y The power spectral density of geophysical signals provides information about the processes that generated them. We present a new approach to determine power spectra based on Thomson’s multitaper analysis method. Our method reduces the bias due to the curvature of the spectrum close to the frequency of interest. Even while maintaining the same resolution bandwidth, bias is reduced ...

This paper presents the impact of parameter optimization of n-type MOSFET for direct tunneling gate current using ultrathin Si3N4 and HfO2 with EOT (Equivalent Oxide Thickness) of 1.0 nm. This work is compared with TCAD santaurus simulation results to verify that accuracy of the model and excellent reduction in gate leakage with the introduction of the high-k gate dielectrics (HfO2 & Si3N4) in ...

----------------------------------------------------------------------ABSTRACT---------------------------------------------------------Different structures of Index-guiding Photonic crystal fibre are designed. The attractive vectorial Finite Element Method simulation technique is used to analyse such PCFs by taking suitable fibre parameter i.e. air hole diameter (d), pitch (Λ) and air core diam...

This paper develops a new model of parameter variations for use in early-stage, pre-RTL architecture studies. It improves over prior models by extending the FMAX model to more faithfully model various microarchitecture structures, especially SRAM, which is dominant in contemporary superscalar processors. It also incorporates optical phenomena, which show strong spatial correlation but neverthel...

In this paper, it is designed and analyzed the n type tunneling Field Effect Transistor (TFET) to obtain sub-threshold swing parameter (SS) below 60 mV/dec, it is better than the limit of conventional MOSFET. SILVACO TCAD is used for rigorous study of p-i-n structure based on Silicon. It is minimised the short channel effect of SiO2 material. It is obtained that TFET has good ability to produce...