A voltage-controlled color tunable organic light emitting device has been demonstrated by using a co-evaporated emissive layer of NPB [(N,N 0-bis(naphthalene-1-yl)-N,N 0-bis(phenyl)benzidine)] and an organic Eu complex. As a result of minimized energy transfer from the host (NPB) to the guest emitter (Eu complex), this device can vary the light emission from vivid red to deep blue with increasi...

In this work, characteristics of top-emitting organic light-emitting devices (TEOLEDs) having Ag and Au as anode had been investigated. When using the same emitting materials, the performance of TEOLEDs employing Ag as anode was superior to that of the device using Au as anode. Finally, by using the appropriate dopant instead of Alq as emitter, a TEOLED with high power efficiency (8.7 lm/w with...

Light emitting pn-diodes were fabricated on a 5.8 mm thick n-type Si device layer of a silicon-on-insulator (SOI) wafer using standard silicon technology and boron implantation. The thickness of the Si device layer was reduced to 1.3 mm, corresponding to a 4l-cavity for l 1⁄4 1150 nm light. Electroluminescence spectra of these low Q-factor microcavities are presented. Addition of Si/SiO2 Bragg ...

introduction: lasers, light emitting diodes (leds) and super luminous diodes (slds) are widely used to treat selected musculoskeletal, integumentary and neurological conditions. the mechanisms underlying the reported treatment effects of light therapy are unclear and the physiologic effect of light on a variety of tissues, particularly neurological, is mostly unknown. a few researchers have rep...

− Light emitting diode antifuse has been integrated into a microfluidic device that is realized with extended standard CMOS technological steps. The device comprises of a microchannel sandwiched between a photodiode detector and a nanometer-scale diode antifuse light emitter. In this chapter, the device fabrication process, working principle and properties will be discussed. Change in the inter...

The organic light-emitting transistor (OLET) is an emerging optoelectronic device having the structure of a thin-film transistor and the capability of light generation [1]. Bright/multicolor OLETs may allow electroluminescent display fabrication with simpler driving circuits. Furthermore, the most advanced OLETs encompass a huge technological potential for the realization of intense nanoscale l...

We report a hybrid up-conversion device integrating a In0.2Ga0.8As/GaAs MQWs photodetector with an organic light emitting diode (OLED), that converts input 980 nm infrared light to output 520 nm green light. Devices with different interface layer, used as the hole injection layer (HIL) in OLEDs were fabricated and tested. It was found that the device with an HIL of MoO3-doped CuPc exhibited a l...

We proposed the hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel electrode circuit with current-scaling function which is suitable for active-matrix organic light-emitting displays (AM-OLEDs). In contrast to the conventional current-mirror circuit, this circuit with the cascaded storage capacitors can provide a high data-to-organic light-emitting device (OLED) current rati...