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We summarize two approaches to integrated multiscale process simulation (IMPS), particularly relevant to integrated circuit (IC) fabrication, in which models for equipment (m) and feature (lm) scales are solved simultaneously. The first approach uses regular grids, and is applied to low-pressure chemical vapor deposition (LPCVD) of silicon dioxide from tetraethoxysilane (TEOS). The second appro...

This work addresses important post-packaging issues for microsystems and recommends specific research directions by localized heating and bonding. Micropackaging has become a major subject for both scientific research and industrial applications in the emerging filed of microelectromechanical systems (MEMS). Establishing a versatile post-packaging process not only advances the field but also sp...

Results on the characterization of the elecmcal properties of amorphous silicon-films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector st...

Nano-textured 4H-SiC homoepitaxial layers (NSiCLs) were grown on 4H-SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were abou...

Due to its special properties, amorphous carbon (a-C) materials have been reported to display novel functions for many potential optical [1,2], frictional [3] and electronic [2,4] applications. These include protective coating, ultra durable anti-reflection coatings [1,2], mechanical devices [2,3], and electron emitters [4]. The ability to fabricate a-C into desired physical shapes has attracte...