نتایج جستجو برای: magnetic semiconductor

تعداد نتایج: 395120  

Journal: :Journal of the American Chemical Society 2002
Pavle V Radovanovic Nick S Norberg Kathryn E McNally Daniel R Gamelin

Methods for introducing new magnetic, optical, electronic, photophysical, or photochemical properties to semiconductor nanocrystals are attracting intense applications-oriented interest. In this communication, we report the preparation and electronic absorption spectroscopy of colloidal ZnO DMS-QDs. Our synthetic procedure involves modification of literature methods known to yield highly crysta...

2009
Kay Potzger Shengqiang Zhou

We review pitfalls in recent efforts to make a conventional semiconductor, namely ZnO, ferromagnetic by means of doping with transition metal ions. Since the solubility of those elements is rather low, formation of secondary phases and the creation of defects upon low temperature processing can lead to unwanted magnetic effects. Among others, ion implantation is a method of doping, which is hig...

Journal: :ACS nano 2015
Shou-Jyun Zou Sheng-Tsung Wang Ming-Fan Wu Wen-Bin Jian Shun-Jen Cheng

We present theoretical and experimental investigations of the magnetism of paramagnetic semiconductor CdSe:Mn nanocrystals and propose an efficient approach to the exposure and analysis of the underlying anti-ferromagnetic interactions between magnetic ions therein. A key advance made here is the development of an analysis method with the exploitation of group theory technique that allows us to...

2014
Kefeng Wang D. Graf Lijun Li Limin Wang C. Petrovic

The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10(5)% in 2 K and 9 T field, and 4.3 × 10(6)% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transi...

Journal: :Physical review letters 2012
Tudor D Stanescu Sumanta Tewari Jay D Sau S Das Sarma

We investigate theoretically the low-energy physics of semiconductor Majorana wires in the vicinity of a magnetic field-driven topological quantum phase transition (TQPT). The local density of states at the end of the wire, which is directly related to the differential conductance in the limit of point-contact tunneling, is calculated numerically. We find that the dependence of the end-of-wire ...

2003
Yong Guo Xue-Zhen Dai

We demonstrate spin-dependent tunneling features of electronic transport in diluted magnetic semiconductor/semiconductor hybrid systems. It is shown that the geometrical asymmetry of the multilayer heterostructure results in the asymmetry of the spin polarization on the external electric field. The degree of the asymmetry can be changed by adjusting the structural configuration and the magnitud...

2010
Alireza Heidari O. Anwar Bég P. Oseloka Ezepue

The transport of electrons in a semiconductor superlattice miniband under the influence of electrical and magnetic fields, which are applied in different directions on the superlattice, is investigated. The time series diagrams and the Lyapunov exponent are computed using the fourth-order Runge-Kutta method. The numerical computations show that for particular values of the parameters, which dep...

Journal: :Physical review applied 2021

We present a hybrid semiconductor-based superconducting qubit device which remains coherent at magnetic fields up to 1 T. The transition frequency exhibits periodic oscillations with field, consistent interference effects due the flux threading cross section of proximitized semiconductor nanowire junction. As induced superconductivity revives, additional modes emerge high fields, we attribute i...

2017
Guo-Ming Sung Wen-Sheng Lin Hsing-Kuang Wang

This paper presents a distance detector composed of two separated metal-oxide semiconductor field-effect transistors (MOSFETs), a differential polysilicon cross-shaped Hall plate (CSHP), and a readout circuit. The distance detector was fabricated using 0.18 μm 1P6M Complementary Metal-Oxide Semiconductor (CMOS) technology to sense the magnetic induction perpendicular to the chip surface. The di...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید