Clearly understanding elementary growth processes that depend on surface reconstruction is essential to controlling vapor-phase epitaxy more precisely. In this study, ammonia chemical adsorption on GaN(0001) reconstructed surfaces under metalorganic vapor phase epitaxy (MOVPE) conditions (3Ga-H and Nad-H + Ga-H on a 2 × 2 unit cell) is investigated using steepest-entropy-ascent quantum thermody...

The coordination of metal cations by ligands is one fundamental interaction in chemistry, Both ionic and covalent interactions play a role. Due to its dative nature, coordinative bonding is reversible in a large number of cases. The reversibility is the most important reason for the application of coordination compounds in a large number of different fields. Just a few examples are the binding ...

Film properties of TaN-based metal (TaCN and TaSiN) have been precisely controlled for plasma enhanced ALD (PEALD) and thermal ALD with additives of N2 or NH3. Film resistivity (ρ) strongly depended on the nitrogen concentration of TaN-based metal. These films showed conformal step-coverage for high-aspect (>6) 50nm-wide trenches. Consequently, ALD TaN-based metal is promising for microelectron...

The chemistry and biochemistry of the vitamin B(12) compounds (cobalamins, XCbl) are described, with particular emphasis on their structural aspects and their relationships with properties and function. A brief history of B(12), reveals how much the effort of chemists, biochemists and crystallographers have contributed in the past to understand the basic properties of this very complex vitamin....

The defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated high-resolution scanning transmission electron microscopy. Perfect dislocations, partial and stacking faults are present in the layers. dislocations identified as 60° mixed-type act misfit to relieve compressive lattice mismatch strain GaN. Stacking mainly bound...

The experimental results of the recent years on synthesis semipolar wide-band III-N layers a nanostructured silicon substrate are summarized. idea involves formation Si(111) side walls surface, then epitaxial nucleation layer in “c” direction crystal, followed by fusion blocks surface. Examples orientation controlling epitaxy AlN(10-11), GaN(10-11), GaN(11-22) synthesized Si(100), Si(113) subst...