This paper begins with a brief introduction to the field of spintronics and dilute magnetic semiconductor (DMS), the second part discusses in detail on three typical DMS materials–(Ga,Mn)As, (Ga,Mn)N and Transition metal doped oxide. Next mechanism of DMS ferromagnetism along with its magneto transport properties are discussed. Following that, an important sample preparation technique in DMS– M...

This paper describes an investigation into the general trend in electronic properties of anatase TiO2 photocatalysts co-doped with transition metals and nitrogen employing first-principles density functional theory. Fourteen different transition metals (M), including Sc, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, and Cd, have been considered. The characteristic band structures of the co-dopi...

Topological insulators are characterized by the presence of spin-momentum-locked surface states with Dirac points that span the fundamental bulk band gap. We show by first-principles calculations that the surface state of the insulator Bi2Te3 survives upon moderate Mn doping of the surface layers. The spin texture of both undoped and Mn-doped Bi2Te3 is much more complicated than commonly believ...

A simple and versatile approach has been developed to synthesize multi-walled carbon nanotubes/metal-doped ZnO nanohybrid materials (MWNT/M-doped ZnO) by means of the co-deposition method. The experimental results illuminate that MWNTs can be modified by metal-doped ZnO nanoparticles at 450 °C, such as Mn, Mg, and Co elements. Furthermore, the MWNT/Mg-doped ZnO hybrids have been proven to have ...

We have employed first-principles calculations based on density functional theory (DFT) to investigate the underlying physics of unusual magnetism in Mn-doped MgO surface. We have studied two distinct scenarios. In the first one, two Mn atoms are substitutionally added to the surface, occupying the Mg sites. Both are stabilized in the Mn[Formula: see text] valence state carrying a local moment ...

Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determined by using Auger electron spectroscopy combined with ion etching. The Mn concentration is higher near the surface and then decreases with depth for films grown at high substrate temperatures. The Mn concentration prof...

Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 °C using various Mn cell temperatures have been investigated with dynamic secondary ion mass spectrometry and Auger electron spectroscopy. When the samples are grown at a low substrate temperature of 250 °C, the Mn distributes uniformly. For the samples grown at a high substrate temperatur...

We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter, the...

Single crystals of one mole % Mn doped CuGaS2 (CGS) compound semiconductor were grown by a chemical vapor transport (CVT) technique in a closed system using iodine as a transporting agent. The electron paramagnetic resonance (EPR) of the Mn ions in a CGS single crystal has been studied with an X-band spectrometer recorded at 80 K. The spectroscopic splitting tensor (g), hyperfine constant (A) a...

Manganese materials with attractive optical properties have been proposed for applications in such areas as photonics, light-emitting diodes, and bioimaging. In this paper, we have demonstrated multicolor Mn2+ luminescence in the visible region by controlling Ce3+-Mn2+ energy transfer in rare earth nanocrystals [NCs]. CeF3 and CePO4 NCs doped with Mn2+ have been prepared and can be well dispers...