This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7 GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode classD (CMCD)/class-S MMICs for data rates of up to 8 Gbit/s equ...

A well-documented MMIC design methodology ensures a much smoother and faster turnaround of circuits. Circuit designs along with information relating to layout, processing, and testing can be preserved and used for future applications, thereby eliminating duplication of effort and providing substantial time and cost savings. This will not only assure a well-controlled and repeatable environment,...

GaAs devices exhibit some general failure modes that can be attributed to a defined failure mechanism. The most common failure modes are observed via degradation of the MMIC parameters such as IDSS, gain, POUT, and others. The degradation observed in MMIC devices is normally a function of the material interactions and the environmental conditions during test or operation. The importance of a pa...

Recently most of integrated circuit chips are made from monolithic IC, which can be manufactured at low cost. In monolithic IC, absolute error which is proportion of the difference of actual value to the designed value of each element is large (several tens of percentages), but the maximum difference of the absolute error of devices on a chip, is small (a few percentages). So it is suitable to ...

Fully monolithic, high-Q, micromechanical signal processors are described. A completely monolithic high-Q oscillator, fabricated via a combined CMOS plus surface micromachining technology, is detailed, for which the oscillation frequency is controlled by a polysilicon micromechanical resonator to achieve high stability. The operation and performance of μmechanical resonators are modelled, with ...

a high accurate and low-voltage analog cmos current divider which operates with a single power supply voltage is designed in 0.18µm cmos standard technology. the proposed divider uses a differential amplifier and transistor in triode region in order to perform the division. the proposed divider is modeled with neural network while tlbo algorithm is used to optimize it. the proposed optimization...

Accurate characterization of field effect transistors (FETs) is necessary for accurate design of monolithic-microwave integrated-circuit (MMIC). Extraction of FET parameters is difficult because the FET is embedded in the parasitic circuit, which is referred to as test element group (TEG), as shown in Fig.1 to connect probe and biases. De-embedding method using open/shortTEG [1] had been widely...

M. Sato, T. Hirose, H. Kobayashi, H. Sato, K. Sawaya and K. Mizuno 1 Device Development Div., Fujitsu Ltd. 10-1, Morinosato-Wakamiya, Atsugi, Kanagawa, Japan E-mail: [email protected] 2 Integrated Sensing systems Dept., Fujitsu Ltd. 1-1-1, Kamikodanaka, Nakaharaku, Kawasaki, 211-8588, Japan 3 Graduate School of Electrical Communication, Tohoku University Aza-Aoba 05, Aramaki, Aobaku, S...

The Y. T. Lee Array for Microwave Background (AMiBA) has reported the first science results on the detection of galaxy clusters via the Sunyaev Zel’dovich effect. The science objectives required small reflectors in order to sample large scale structures (20’) while interferometry provided modest resolutions (2’). With these constraints, we designed for the best sensitivity by utilizing the maxi...

A novel CPW-to-waveguide transition utilizing a uniplanar quasi-Yagi antenna is presented. The X-band back-to-back transition demonstrates 33% bandwidth with return loss better than -10dB. This transition should find a wide variety of applications due to its high MIC/MMIC compatibility and low cost.